[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties
A Giunto, A Fontcuberta i Morral - Applied Physics Reviews, 2024 - pubs.aip.org
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
Simulation of high-efficiency resonant-cavity-enhanced GeSn single-photon avalanche photodiodes for sensing and optical quantum applications
Two novel resonant-cavity-enhanced (RCE) GeSn single-photon avalanche photodiode
(SPAD) detectors are designed and simulated for high-efficiency single-photon detection at …
(SPAD) detectors are designed and simulated for high-efficiency single-photon detection at …
Strain-driven anomalous elastic properties of GeSn thin films
Elastic strain engineering in the GeSn bandgap structure is an attractive area for designing
novel material properties. The linear interpolation of the elastic constants of Ge and Sn is …
novel material properties. The linear interpolation of the elastic constants of Ge and Sn is …
Band and luminescence regulation of SiGeSn ternary alloy: A first-principles investigation
S Sun, W Huang, L Zhang, Z Chen, H Wang… - Journal of Alloys and …, 2022 - Elsevier
Current experiments show that the ternary alloy Si y Ge z Sn x has larger crystal lattice and
bandgap control range than group IV binary alloy, and it is a popular material for the …
bandgap control range than group IV binary alloy, and it is a popular material for the …
Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
A minority carrier lifetime of 2.7 ns is measured at 77 K for a GeSn/SiGeSn single quantum
well using time-resolved photoluminescence, and subsequent analyses indicate that the …
well using time-resolved photoluminescence, and subsequent analyses indicate that the …
Photoconductivity of GeSn thin films with up to 15% Sn content
We have used temperature-dependent photoconductivity (PC) with different excitation
wavelengths and intensities to study the photoexcited charge-carrier transport within …
wavelengths and intensities to study the photoexcited charge-carrier transport within …
[PDF][PDF] 硅基Ⅳ 族SiGeSn 三元合金晶格结构, 电子结构和光学性质的第一性原理
孙生柳， 黄文奇， 张立鑫， 谌珍雨， 王浩 - 人工晶体学报, 2021 - researching.cn
SiGeSn 三元合金由于具有较二元合金更大的晶格和能带性质调控范围, 是当前用于制作硅基
激光器的热点材料. 为全面且精确地研究其晶格结构, 电子结构和光学性质 …
激光器的热点材料. 为全面且精确地研究其晶格结构, 电子结构和光学性质 …
Conductivity-type conversion in self-assembled GeSn stripes on Ge/Si (100) under electric field
We report on the electronic properties of self-assembled Ge99Sn1 stripes surrounded by
inhomogeneous Ge96. 6Sn3. 4 area resulting from the segregation and migration of Sn …
inhomogeneous Ge96. 6Sn3. 4 area resulting from the segregation and migration of Sn …
Systematic study on photoexcited carrier dynamics related to defects in GeSn films with low Sn content at room temperature
Germanium–tin (GeSn) alloys have received much attention thanks to their optical/electrical
properties and their operation in the mid-infrared range. However, dislocations/defects in …
properties and their operation in the mid-infrared range. However, dislocations/defects in …
High-performance GE/GESN photodetectors in near-and mid-infrared range
B Son - 2021 - dr.ntu.edu.sg
Demand for Near-(NIR) and Mid-infrared (MIR) range detection has increased drastically for
practical applications in optical sensing, imaging, and communications. Silicon (Si)-based …
practical applications in optical sensing, imaging, and communications. Silicon (Si)-based …