CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-
N s electron mobility was dramatically improved thanks to (i) atomically flat Ge surface …

This paper reports the atomically flat surface formation of germanium (Ge)(111) in hydrogen
gas (H 2) annealing. The (111)-oriented Ge substrate was annealed at 350–850 C, and the …

In this paper, we study the low-frequency noise in the Ge nanowire (NW) nMOSFETs with
sub-100-nm channel length. The low-frequency noise with 1/f characteristics is proved to …

We demonstrate that Ge FETs show significantly high mobility of not only hole but also
electron. In particular, this paper discusses what challenging issues are in n-channel FETs …

As the semiconductor industry moves beyond the 10 nm node, power consumption
constraints and reduction of the negative impact of parasitic elements become important …

In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate.
To improve the samples' interface roughness between the Si/Ge film and the interface layer …

Abstract 2D materials provide an alternative way to passivate the Ge/oxide interface
because of their conduction and valence band offsets. The effectiveness of their interface …

We demonstrate that Ge FETs show significantly high mobility of not only hole but also of
electron. This paper discusses, in particular, what are challenging issues in n-channel FETs …

Germanium (Ge) is not a new material but now spotlighted for beyond Si-scaled CMOS. Ge
p-MOSFETs have been well investigated and its high performance has so far been …