Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides
J Rönn, W Zhang, A Autere, X Leroux… - Nature …, 2019 - nature.com
Efficient and reliable on-chip optical amplifiers and light sources would enable versatile
integration of various active functionalities on the silicon platform. Although lasing on silicon …
integration of various active functionalities on the silicon platform. Although lasing on silicon …
A silicon photonic data link with a monolithic erbium-doped laser
To meet the increasing demand for data communication bandwidth and overcome the limits
of electrical interconnects, silicon photonic technology has been extensively studied, with …
of electrical interconnects, silicon photonic technology has been extensively studied, with …
Relative oxidation state of the target as guideline for depositing optical quality RF reactive magnetron sputtered Al2O3 layers
CI Van Emmerik, WAPM Hendriks, MM Stok… - Optical Materials …, 2020 - opg.optica.org
Amorphous Al_2O_3 is an attractive material for integrated photonics. Its low losses from the
UV till the mid-IR together with the possibility of doping with different rare-earth ions permits …
UV till the mid-IR together with the possibility of doping with different rare-earth ions permits …
Resonant Coupling for Active–Passive Monolithic Integration of Al2O3 and Si3N4
J Mu, M Dijkstra… - IEEE Photonics …, 2019 - ieeexplore.ieee.org
The developed double-layer Al 2 O 3-Si 3 N 4 photonic platform monolithically combines the
outstanding optical features of LPCVD Si 3 N 4 and the properties of rare-earth-ion-doped Al …
outstanding optical features of LPCVD Si 3 N 4 and the properties of rare-earth-ion-doped Al …
Monolithic integration of Al2O3: Er3+ amplifiers in Si3N4 technology
J Mu, M Dijkstra, SM García-Blanco - The European Conference on …, 2019 - opg.optica.org
Si 3 N 4 platforms have promising features including low waveguide loss (< 0.1 dB/cm), wide
transparency window (0.4–2.35 μm), and compatibility with CMOS technology [1]. Low-cost …
transparency window (0.4–2.35 μm), and compatibility with CMOS technology [1]. Low-cost …
[引用][C] Resonant Coupling in Double-layer Monolithic Integration of Al2O3 and Si3N4
J Mu, M Dijkstra, M de Goede, SM García-Blanco