Design high performance field-effect, strain/gas sensors of novel 2D penta-like Pd2P2SeX (X= O, S, Te) pin-junction nanodevices: A study of transport properties
X Dong, T Chen, G Zhou - Journal of Alloys and Compounds, 2024 - Elsevier
In the realm of modern nanodevices, attaining high-switching performance and fulfilling
sensing detection functions in high-precision environments are of paramount importance …
sensing detection functions in high-precision environments are of paramount importance …
Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
Performance Limit of Gate-All-Around Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation
The gate-all-around (GAA) Si nanowire (NW) field-effect transistor (FET) is considered one
of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its …
of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its …
Monolayer : A promising channel material for sub-5-nm-gate homogeneous CMOS devices
Complementary metal oxide semiconductor (CMOS) devices require both n-type and p-type
metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving both types that …
metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving both types that …
Discovery of clustered-P1 borophene and its application as the lightest high-performance transistor
The two-dimensional network of boron atoms (borophene) has attracted attention for its
ultralow molar mass and remarkable polymorphism. Synthesized polymorphs of borophene …
ultralow molar mass and remarkable polymorphism. Synthesized polymorphs of borophene …
Two-dimensional MoSi 2 As 4-based field-effect transistors integrating switching and gas-sensing functions
MM Dong, H He, CK Wang, XX Fu - Nanoscale, 2023 - pubs.rsc.org
Multifunctional nanoscale devices integrating multiple functions are of great importance for
meeting the requirements of next-generation electronics. Herein, using first-principles …
meeting the requirements of next-generation electronics. Herein, using first-principles …
Ferroelectric-Tunable Photoresponse in α- Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study
Two-dimensional α-In 2 Se 3 has drawn broad attention due to its high photoresponse and
unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an …
unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an …
A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal–semiconductor phase transition
Power dissipation, a fundamental limitation for realizing high-performance electronic
devices, may be effectively reduced by an external supply voltage. However, a small supply …
devices, may be effectively reduced by an external supply voltage. However, a small supply …
Sub-5-nm Monolayer Boron Pnictide MOSFETs for n- and p-Type High-Performance Applications
H Li, Y Liu, F Liu, J Lu - Physical Review Applied, 2023 - APS
Channel materials with symmetrical performances for n-and p-type transistors and shrinking
transistors to the ultrascale limit are essential for CMOS integrated circuits (ICs) in the …
transistors to the ultrascale limit are essential for CMOS integrated circuits (ICs) in the …
Sub-5 nm gate length selenium nanowire transistors: Implications for nanoelectronics
Q Li, X Tan, Y Yang - ACS Applied Nano Materials, 2023 - ACS Publications
Semiconductors with low dimensions have been presented when field-effect transistors
(FETs) using silicon as a channel material approach their limits related to scale. Recently, 5 …
(FETs) using silicon as a channel material approach their limits related to scale. Recently, 5 …