This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …

Experimental pulse length–pulse voltage studies of SrTiO3 memristive cells are reported,
which reveal nonlinearities in the switching kinetics of more than nine orders of magnitude …

Resistance random access memory, short RRAM, which employs two or more resistive
states of a material for data storage, has attracted considerable attention as a highly …

Memristive switching in nanoionic devices involves the interplay between physical,
electrochemical and thermochemical processes, which can occur in the bulk or at interfaces …

(Figure Presented) The resistive switching properties of Sr 2 TiO 4 thin films with specific
defect distribution have been studied. Junctions of Sr 2 TiO 4 thin films containing a high …

Resistive switching (RS) is currently one of the hot topics in the frontier between materials
science and microelectronics, crosslinking both research communities. Among the different …

In recent years, the emergence of memory devices, especially resistive random-access
memories (RRAM), has been a front-runner in many technological applications. This is due …