Low‐power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology
The authors present a low‐power 850 nm Si optoelectronic integrated circuit (OEIC) receiver
fabricated in standard 65 nm complementary metal–oxide semiconductor (CMOS) …
fabricated in standard 65 nm complementary metal–oxide semiconductor (CMOS) …
CMOS integrated remote antenna unit for fiber-fed distributed MIMO systems
W Ahmad, M Abdulaziz, A Nejdel… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
A fully integrated remote antenna unit (RAU) intended for fiber-fed distributed multiple-input
multiple-output systems is presented. The circuit is designed for narrowband (60 MHz) time …
multiple-output systems is presented. The circuit is designed for narrowband (60 MHz) time …
Characterisation of Photodiodes in 22 nm FDSOI at 850 nm
We present the analysis and measurement results of photodiodes (PDs) fabricated in 22 nm
Fully-Depleted Silicon-On-Insulator (FDSOI) technology at a wavelength of 850 nm. To the …
Fully-Depleted Silicon-On-Insulator (FDSOI) technology at a wavelength of 850 nm. To the …
A multi-sensing pixel for integrated opto-chemical sensing with temperature compensation
M He, N Moser, P Georgiou - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
A multi-sensor pixel is presented using ion-sensitive field-effect transistors (ISFETs) as ion
sensors, photodiodes as optical sensors and MOSFETs as temperature sensors. The pixel is …
sensors, photodiodes as optical sensors and MOSFETs as temperature sensors. The pixel is …
Equalizing Si photodetectors fabricated in standard CMOS processes
E Guerrero, J Aguirre… - … and Applications IV, 2017 - spiedigitallibrary.org
This work presents a new continuous-time equalization approach to overcome the limited
bandwidth of integrated CMOS photodetectors. It is based on a split-path topology that …
bandwidth of integrated CMOS photodetectors. It is based on a split-path topology that …
A fully integrated radio-fiber interface in 65 nm CMOS technology
W Ahmad, M Törmänen… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
In this letter, we present a fully integrated radio-fiber interface implemented in 65-nm CMOS,
intended for remote antenna units (RAUs) in distributed antenna systems. To relax the …
intended for remote antenna units (RAUs) in distributed antenna systems. To relax the …
Continuous-time equalizer for CMOS integrated photodiodes
J Aguirre, E Guerrero… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
Fully integrated optoelectronic interfaces in CMOS technology are a very interesting option
for optical smart sensors because they are a cost-effective and compact solution. However …
for optical smart sensors because they are a cost-effective and compact solution. However …
CMOS photosensors for LIDAR
TM Khanshan, KG Kjeldgard, E Ulvestad… - 2018 IEEE Nordic …, 2018 - ieeexplore.ieee.org
In this paper photosensors for CMOS LIDAR intended for non-invasive biosensing are
presented. Adequate depth resolution requires high-speed sampling and high-speed …
presented. Adequate depth resolution requires high-speed sampling and high-speed …
[图书][B] Equalization Techniques for CMOS Optical Receivers with Integrated Silicon Photodiode
BC Kim - 2017 - search.proquest.com
Optical links are progressively penetrating into short-range communication applications
largely due to the advancement in silicon (Si) photonics technology. Si photonics provide a …
largely due to the advancement in silicon (Si) photonics technology. Si photonics provide a …
Fully integrated radio over fiber downlink for distributed multi-antenna systems in 65 nm CMOS
W Ahmad, A Nejdel, M Törmönen… - 2014 IEEE 12th …, 2014 - ieeexplore.ieee.org
This paper presents a fully integrated downlink for low-cost remote antenna units in fiber-fed
distributed multi-antenna systems. To reduce the cost of optical parts, an intermediate …
distributed multi-antenna systems. To reduce the cost of optical parts, an intermediate …