Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application
In the era of big data, negative differential resistance (NDR) devices have attracted
significant attention as a means of handling massive amounts of information. While 2D …
significant attention as a means of handling massive amounts of information. While 2D …
[HTML][HTML] Silicon cross-coupled gated tunneling diodes
Z Tang, Z Wang, Z Song, W Zheng - Chip, 2024 - Elsevier
Tunneling-based static random-access memory (SRAM) devices have been developed to
fulfill the demands of high density and low power, and the performance of SRAMs has also …
fulfill the demands of high density and low power, and the performance of SRAMs has also …
A 7nm-Based Decodable Self-Resetting Regfile Circuit
W Zhao, Y Zhang, M Ren, L Wen… - 2023 IEEE 15th …, 2023 - ieeexplore.ieee.org
This paper presents a novel design scheme for a decodable self-resetting Regfile circuit that
aims to reduce the power consumption caused by massive data and high computing power …
aims to reduce the power consumption caused by massive data and high computing power …