Publisher Summary Cathodoluminescence (CL) is light emitted by a solid material because
of irradiation by an electron beam. When the spectral distribution of light is studied, CL …

An experimental method to determine the temperature dependence of residual stress in
three-dimensional (3D) structures was developed using polarized Raman spectroscopy …

Abstract Optimization of Heterojunction Bipolar Transistors is crucial for improving RF
capabilities of modern BiCMOS technologies. Fully-implanted collectors are meant to reduce …

A procedure to obtain the semi-quantitative depth distribution of radiative recombination
centers in silicon power devices has been developed using cross-sectional …

Most of the materials have dopants to create functionalities. However, due to the high
demands on material functionality in cutting-edge devices, the conventional concept of point …

The effect of gate metal film stress on the performance of gate-last metal–oxide–
semiconductor field-effect transistors (MOSFETs) with a W/TiN/SiO 2 gate stack was …

Cross-sectional cathodoluminescence (CL) measurements were applied to the study of
electron-irradiated punch-through insulated gate bipolar transistors (IGBTs) to investigate …

We investigated the residual defects in low-dose (10 13 cm− 2) arsenic implanted Si after
high-temperature (1100° C) annealing. The presence of residual damage was successfully …

This chapter describes the latest analysis examples, combing Raman, IR, and CL
spectroscopy. Strained Si techniques, such as incorporating SiGe is essential forboost …

Stress engineering related to the frontend process as well as the backend process of LSI is
required [1-7]. As for shallow trench isolation (STI) structures, it was reported that a high …