Modeling of voltage-controlled spin–orbit torque MRAM for multilevel switching application
S Shreya, BK Kaushik - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
Magnetic tunnel junction (MTJ) has emerged as a viable candidate for next-generation
memory and logic applications. Manipulation of the magnetic and electric field can control …
memory and logic applications. Manipulation of the magnetic and electric field can control …
Differential MRAM Sensing Scheme with Magnetoresistance Boosted 4T-2MTJ Bit-cell
For the increasing demand for energy-efficient computing in edge devices, spin transfer
torque magnetic random access memory (STT-MRAM) becomes a promising candidate for …
torque magnetic random access memory (STT-MRAM) becomes a promising candidate for …
Design of auto-store circuit for nvSRAM with SONOS access transistor
W Ko, J Sung, J Jeong, J Ahn, H Lee, G Lee - Solid-State Electronics, 2023 - Elsevier
In this paper, an auto-store circuit that can perform a store and restore operation of non-
volatile SRAM (nvSRAM) with access transistor whose gate stack is Silicon-Oxide-Nitride …
volatile SRAM (nvSRAM) with access transistor whose gate stack is Silicon-Oxide-Nitride …