[图书][B] Handbook of semiconductor interconnection technology

GC Shwartz - 2006 - books.google.com
This book describes the equipment used in manufacturing for deposition and etching, such
as electrochemical deposition equipment used for plating copper. It emphasizes the …

The intrinsic mechanism of corrosion resistance for FCC high entropy alloys

XL Shang, ZJ Wang, F He, JC Wang, JJ Li… - Science China …, 2018 - Springer
The concept of high entropy alloys (HEAs) or multi-principal component alloys has inspired
a great progress of physical metallurgy along with several unusual phenomena. The high …

Influence of slurry components on copper CMP performance in alkaline slurry

Q Xu, L Chen, F Yang, H Cao - Microelectronic Engineering, 2017 - Elsevier
In this work, we have designed copper chemical mechanical planarization (CMP)
experiments to investigate the effect of slurry components on the planarization performance …

300 mm wafer-level hybrid bonding for Cu/interlayer dielectric bonding in vacuum

M Fujino, K Takahashi, Y Araga… - Japanese Journal of …, 2019 - iopscience.iop.org
Wafer bonding technology is one of the key technologies for high-density three-dimensional
integration. We demonstrated 300 mm wafer-level hybrid bonding with Cu and an interlayer …

A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal

C Wang, Y Liu, J Tian, B Gao, X Niu - Microelectronic Engineering, 2012 - Elsevier
Chemical mechanical planarization (CMP) is a vital process for the fabrication of advanced
copper multilevel interconnects schemes. The formidable challenge in barrier CMP is that …

Investigation of the barrier slurry with better defect performance and facilitating post-CMP cleaning

X Luan, Y Liu, B Zhang, S Wang, X Niu, C Wang… - Microelectronic …, 2017 - Elsevier
It becomes very critical for yield enhancement to accomplish defect free global planarization
during barrier CMP. Conventional commercial barrier chemical mechanical polishing (CMP) …

Electrochemical study on metal corrosion in chemical mechanical planarization process

S Kondo, Y Ichige, Y Otsuka - Japanese Journal of Applied …, 2017 - iopscience.iop.org
Typical metal corrosions caused by the chemical mechanical planarization (CMP) process
are discussed in this review paper. By categorizing them into seven kinds of corrosion …

Development of Fingerprints using Electrolysis: A Technical Report into the Development of Fingerprints on Fired Brass Cartridge Cases.

F Nizam, W Knaap, JD Stewart - Journal of Forensic …, 2012 - search.ebscohost.com
This paper examines whether electrolysis could be a useful method in the development of
latent fingerprints on fired brass cartridge cases. The influence of electrolysis on galvanic …

High-selectivity damascene chemical mechanical polishing

SY Chiu, YL Wang, CP Liu, SC Chang, GJ Hwang… - Thin Solid Films, 2006 - Elsevier
In this study, multi-step chemical mechanical polishing (CMP) with different copper removal
rates and polishing pads is used to eliminate topography efficiently and to reduce micro …

Influence of abrasive morphology and size dispersity of Cu barrier metal slurry on removal rates and wafer surface quality in chemical mechanical planarization

S Hong, D Han, J Kwon, SJ Kim, SJ Lee… - Microelectronic …, 2020 - Elsevier
Chemical mechanical planarization (CMP) is widely used in the fabrication of semiconductor
devices to achieve global planarization. The overall CMP performance is affected by …