Analytical modeling of the SOI four-gate transistor using conformal mapping

[PDF] researchgate.net

Effect of Gate Bias on Graphene Channel of G4-FET and Gate-All-Around MOSFET

MR Alam, H Rahman - 2018 10th International Conference on …, 2018 - ieeexplore.ieee.org
In this paper, the effect of gate bias using potential distribution for Graphene channel Four
Gate Transistor (G4-FET) and Gate-All-Around (GAA) MOSFET have been shown. Potential …
被引用次数：1 相关文章 所有 2 个版本
[PDF] academia.edu

[PDF][PDF] Drain Current Model of Graphene Channel G 4-FET and Gate-All-Around MOSFET

MR Alam, TR Pathan, H Rahman - 2018 - academia.edu
Potential distribution and Wave function distribution are obtained by solving 2-D Poisson-
Schrödinger equation using COMSOL with MATLAB. Conduction band profile and carrier …
被引用次数：1 相关文章 所有 3 个版本
[PDF] buet.ac.bd

Modeling of drain current for graphene channel G4FET and gate-all-around MOSFET

R Alam - 2018 - lib.buet.ac.bd
The structure of Graphene channel Four Gate Field Effect Transistor (G4-FET) and Gate-All-
Around (GAA) MOSFET have been developed in 3D ATLAS simulator of SILVACO in this …
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