Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Silicon-Carbide (SiC) devices with superior performance over traditional silicon power
devices have become the prime candidates for future high-performance power electronics …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

This article presents the state-of-the-art electric vehicle (EV) charging technologies that
benefit from the wide bandgap (WBG) devices, which is regarded as the most significant …

During recent years, silicon carbide (SiC) power electronics has gone from being a
promising future technology to being a potent alternative to state-of-the-art silicon (Si) …

Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …

Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …

Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field
strength, making it especially attractive for high-power and high-temperature devices …

Abstract 4H-SiC (0001),(0001), and (1120) have been directly oxidized by N 2 O at 1300 C,
and metal–oxide–semiconductor (MOS) interfaces have been characterized. The interface …

Silicon carbide (SiC) pin diodes having five different n--layer (i-layer) thicknesses from 48 to
268 μm are fabricated. The forward characteristics of SiC pin diodes are significantly …