Impact of work function engineering in charge plasma based bipolar devices
In this paper, we have explored and justified the reason behind the degradation in the cutoff
frequency of the bipolar transistors evolved from the charge plasma concept. It has been …
frequency of the bipolar transistors evolved from the charge plasma concept. It has been …
First-principles investigations for the electronic and transport properties of zigzag SiC nanoribbons with Fluorine passivation/adsorption
A Nemu, NK Jaiswal - Journal of Molecular Graphics and Modelling, 2023 - Elsevier
Nanoribbons with different edge functionalization display interesting electronic properties for
various device applications. It requires the necessity of exploring the novel passivating …
various device applications. It requires the necessity of exploring the novel passivating …
Exploration of logic gates and multiplexer using doping-free bipolar junction transistor
Logic gates are designed using symmetric lateral doping-free bipolar junction transistor
(BJT) on silicon on insulator (SOI) using differential pass transistor logic, and their …
(BJT) on silicon on insulator (SOI) using differential pass transistor logic, and their …
Improved performance of bipolar charge plasma transistor by reducing the horizontal electric field
LK Bramhane, J Singh - Superlattices and Microstructures, 2017 - Elsevier
In this paper, we have proposed a modified lateral bipolar charge plasma transistor (BCPT).
The appropriate work function engineering is used to induce the electron-hole …
The appropriate work function engineering is used to induce the electron-hole …
兼具高电流增益和高击穿性能的电荷等离子体双极晶体管.
金冬月， 贾晓雪， 张万荣， 那伟聪… - Journal of Beijing …, 2023 - search.ebscohost.com
先研究了集电极金属对BCPT 性能的影响. 分析表明, BCPT 集电区的电子浓度强烈依赖于电极
金属的功函数, 当采用功函数较大的铝(Al) 作为集电极金属时, 由于减小了金属 …
金属的功函数, 当采用功函数较大的铝(Al) 作为集电极金属时, 由于减小了金属 …
Energy Efficient Implementation of Processing Elements for CNN Hardware Accelerator
SS Karapurkar, LK Bramhane… - … on Emerging Trends …, 2023 - ieeexplore.ieee.org
Deep Learning has been a trending area for researchers in multi-domain applications.
Extending its use to platforms with more limited resources, large volumes of data, and …
Extending its use to platforms with more limited resources, large volumes of data, and …
Comparative Study of Different Configurations in Triple-Sided Charged Plasma Symmetric Lateral Heterojunction Bipolar Transistors on SOI
L Beloni Devi, A Srivastava - ACS Applied Electronic Materials, 2019 - ACS Publications
A comparative simulation study of triple-sided charged plasma symmetric lateral
heterojunction bipolar transistors (3SCP SLHBTs) on SOI is performed for the first time. A …
heterojunction bipolar transistors (3SCP SLHBTs) on SOI is performed for the first time. A …
A better TID hardened Dopingless Lateral Bipolar Transitor on SiGe-OI design
LB Devi, J Kumar, A Srivastava - 2019 IEEE 19th International …, 2019 - ieeexplore.ieee.org
Impact of Total Ionization Doze (TID) on the charge plasma induced dopingless lateral
bipolar transistor on SiGe-OI is studied. This paper proposes a new TID hardened charge …
bipolar transistor on SiGe-OI is studied. This paper proposes a new TID hardened charge …