III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are
electrically driven at room temperature,. To fully utilize the benefits of large-scale, low-cost …

We propose, fabricate, and characterize the on-chip integration of suspended pn junction
InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same …

We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy
considering the (0001) and (000− 1) surface states. Surface reconstruction, which depends …

This letter reports a successful fabrication of room-temperature electrically injected AlGaN-
based near-ultraviolet laser diode grown on Si. An Al-composition step down-graded …

Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and
nucleation growth were observed after miscut-induced atomic steps disappeared. The …

Group III-nitride semiconductors (GaN, AlN, and InN) are attractive materials for a wide
range of electronic and photonic applications. The most widely employed growth plane for III …

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning
InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for …

The multiple functionalities of III-nitride semiconductors enable the integration with different
components into a multicomponent system with enhanced functions. Here, we propose to …

We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and
bottom dielectric TiO 2/SiO 2 distributed Bragg reflector (DBR) mirrors on a silicon substrate …