Point defects have a strong impact on the performance of semiconductor and insulator
materials used in technological applications, spanning microelectronics to energy …

Structure–property relationships form the basis of many design rules in materials science,
including synthesizability and long-term stability of catalysts, control of electrical and …

n-type doping in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit
due to the Fermi-level pinning via defect complexes at high doping concentrations. Here, we …

Si hyperdoped with chalcogens (S, Se, Te) is well known to possess unique properties such
as an insulator-to-metal transition and a room-temperature sub-band-gap absorption. These …

Thermal annealing has been widely used in the fabrication of microelectronic devices.
However, the sub-bandgap infrared (wavelength λ= 1100–2500 nm) absorption of deep …

Ge-based substrates are being developed for applications in advanced nano-electronic
devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion …

Hyperdoping germanium with gold is a potential method to produce room-temperature short-
wavelength-infrared radiation (SWIR; 1.4–3.0 μ m) photodetection. We investigate the …

Using radioactive isotopes produced at the CERN-ISOLDE facility, the lattice location of the
implanted transition metal (TM) ions 56 Mn, 59 Fe and 65 Ni in n-type single-crystalline …

Mn-doped Si has attracted significant interest in the context of dilute magnetic
semiconductors. We investigated the lattice location of implanted Mn in silicon of different …

Although the formation of transition metal-boron pairs is currently well established in silicon
processing, the geometry of these complexes is still not completely understood. We …