Growth and properties of GaSbBi alloys
Molecular-beam epitaxy has been used to grow GaSb 1− x Bi x alloys with x up to 0.05. The
Bi content, lattice expansion, and film thickness were determined by Rutherford …
Bi content, lattice expansion, and film thickness were determined by Rutherford …
[HTML][HTML] High Bi content GaSbBi alloys
The epitaxial growth, structural, and optical properties of GaSb 1–x Bi x alloys have been
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys
The epitaxial growth, structural and optical properties of GaSb 1− x Bi x layers are reported.
The incorporation of Bi into GaSb is varied in the 0< x⩽ 14% range by varying the growth …
The incorporation of Bi into GaSb is varied in the 0< x⩽ 14% range by varying the growth …
Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells
We have investigated the role of the nitrogen content, the growth parameters, and the
annealing processes involved in molecular beam epitaxy of GaInNAs solar cells lattice …
annealing processes involved in molecular beam epitaxy of GaInNAs solar cells lattice …
[HTML][HTML] Optimized molecular beam epitaxy process for lattice-matched narrow-bandgap (0.8 eV) GaInNAsSb solar junctions
R Isoaho, A Tukiainen, J Puutio, A Hietalahti… - Solar Energy Materials …, 2022 - Elsevier
High performance narrow-bandgap GaInNAsSb solar cells are instrumental for the
development of lattice-matched GaAs-based solar cells with more than four junctions. To this …
development of lattice-matched GaAs-based solar cells with more than four junctions. To this …
Effects of growth interruption, As and Ga fluxes, and nitrogen plasma irradiation on the molecular beam epitaxial growth of GaAs/GaAsN core–shell nanowires on Si …
N Ahn, Y Araki, M Kondow, M Yamaguchi… - Japanese Journal of …, 2014 - iopscience.iop.org
We investigate fundamental issues on the growth of GaAs/GaAsN core–shell heterostructure
nanowires (NWs) by plasma-assisted molecular beam epitaxy. A Ga catalyst crystallizes …
nanowires (NWs) by plasma-assisted molecular beam epitaxy. A Ga catalyst crystallizes …
Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
Abstract The effects of Bi, In flux and PH 3 pressure on Bi incorporation, structural and
transport properties of InPBi grown by gas source molecular beam epitaxy have been …
transport properties of InPBi grown by gas source molecular beam epitaxy have been …
Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs
S Wicaksono, SF Yoon, KH Tan, WK Cheah - Journal of crystal growth, 2005 - Elsevier
GaAsSbN is a potential material for GaAs-based long wavelength optoelectronic devices. In
this work, using solid source molecular beam epitaxy in conjunction with a radio frequency …
this work, using solid source molecular beam epitaxy in conjunction with a radio frequency …
Room temperature photoluminescence at 4.5 μm from InAsN
Q Zhuang, AMR Godenir, A Krier, KT Lai… - Journal of applied …, 2008 - pubs.aip.org
Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted
molecular beam epitaxy was investigated as a function of growth conditions. Reduced …
molecular beam epitaxy was investigated as a function of growth conditions. Reduced …
Comparative study of defect levels in GaInNAs, GaNAsSb, and GaInNAsSb for high-efficiency solar cells
Background doping and defect levels in GaInNAs, GaNAsSb, and GaInNAsSb solar cells
with 1 eV band-gap are reported. Localized point defect induced traps were observed …
with 1 eV band-gap are reported. Localized point defect induced traps were observed …