In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …

This paper proposes a mini-light-emitting diode (mini-LED) driving circuit that is driven by
pulse width modulation (PWM) for the backlights of active-matrix (AM) liquid crystal displays …

A gate-all-around polycrystalline silicon nanowire (NW) floating-gate (FG) memory device
was fabricated and characterized in this work. The cross-section of the NW channels was …

Tunnel-barrier-engineered thin-film transistor (TFT) memory (TBE-TFT memory) devices on
glass substrates were fabricated using low-temperature processes. An amorphous silicon …

In this work, we studied a pi-shape gate polycrystalline silicon thin-film transistor (poly-Si
TFT) with silicon-oxide-nitride-oxide-silicon (SONOS) layers and nanowire channels for the …

Non-volatile nano-floating gate memory characteristics with colloidal Pt-Fe 2 O 3 composite
nanoparticles with a mostly core–shell structure and indium gallium zinc oxide channel layer …

This study addresses the characteristics of polycrystalline-silicon thin-film transistors (poly-Si
TFTs) with 3-D finlike channels fabricated using ultraviolet nanoimprint lithography. The poly …

In this work, metal–oxide–nitride–oxynitride–silicon (MONOS) devices with silicon oxynitride
film as tunneling layer of nonvolatile memory have been fabricated. General chemical vapor …

A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular
nanowire (NW) channels was fabricated and characterized in this work. The enhanced …

This work proposes a spatially charge tunneling method for program/erase (P/E) based on
the drain-modulated Fowler-Nordheim (MFN) tunneling in a polycrystalline silicon channel …