Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
A large number of factors such as the increasingly stringent pollutant emission policies,
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
New figure-of-merit combining semiconductor and multi-level converter properties
Figures-of-Merit (FOMs) are widely-used to compare power semiconductor materials and
devices and to motivate research and development of new technology nodes. These …
devices and to motivate research and development of new technology nodes. These …
On the Origin of the -Losses in Soft-Switching GaN-on-Si Power HEMTs
M Guacci, M Heller, D Neumayr, D Bortis… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
The unprecedented performance potential of gallium nitride-on-silicon (GaN-on-Si) high
electron mobility transistors (HEMTs) is seen as the key enabler for the design of power …
electron mobility transistors (HEMTs) is seen as the key enabler for the design of power …
Design and experimental analysis of 166 kW medium-voltage medium-frequency air-core transformer for 1: 1-DCX applications
The galvanic isolation of solid-state transformers (SSTs) is typically realized with a medium-
frequency (MF) magnetic-core transformer (MCT). Previous demonstrations indicate that …
frequency (MF) magnetic-core transformer (MCT). Previous demonstrations indicate that …
Circuit-based electrothermal modeling of SiC power modules with nonlinear thermal models
S Race, A Philipp, M Nagel, T Ziemann… - IEEE transactions on …, 2022 - ieeexplore.ieee.org
Silicon carbide (SiC) power devices have the potential to operate at high temperatures
beyond the capabilities of silicon power devices. At increased temperatures, the temperature …
beyond the capabilities of silicon power devices. At increased temperatures, the temperature …
On-state voltage measurement of fast switching power semiconductors
The on-state resistance R ds, on is a key characteristic of unipolar power semiconductors
and its value depends on the operating conditions, eg junction temperature, conducted …
and its value depends on the operating conditions, eg junction temperature, conducted …
High-efficiency weight-optimized fault-tolerant modular multi-cell three-phase GaN inverter for next generation aerospace applications
The aircraft industry demands a significant increase in terms of efficiency and gravimetric
power density of power converters for next generation aerospace applications. Between the …
power density of power converters for next generation aerospace applications. Between the …
Layout-dominated dynamic current balancing analysis of multichip sic power modules based on coupled parasitic network model
Multichip silicon carbide (SiC) power modules with Kelvin-source connections are
commonly used in applications requiring large capacity. As a result of the parasitic effect …
commonly used in applications requiring large capacity. As a result of the parasitic effect …
Characterization of a bare-die SiC-based, wirebond-less, integrated half-bridge with multi-functional bus-bars
This article presents detailed analysis and charact-erization results of a bare-die silicon
carbide (SiC) MOSFET-based, half-bridge switch module with integrated decoupling …
carbide (SiC) MOSFET-based, half-bridge switch module with integrated decoupling …
Balancing the switching losses of paralleled SiC MOSFETs using a stepwise gate driver
This paper presents a multi-stage gate driver based on a switched gate resistor topology for
paralleled silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …
paralleled silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …