(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …

A dielectric film containing HfAlO and a method of fabri cating Such a dielectric film produce
a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using …

5,032,545 5,049,516 5,055,319 5,080,928 5,089,084 5, 198,029 5,302.461 5,595,606
5,614,026 5,621,681 5,625,233 5,674.563 5,674,574 5,698,022 5,735,960 5,744,374 …

The present inventors devised unique atomic-layer deposi tion systems, methods, and
apparatus Suitable for aluminum oxide deposition. One exemplary method entails providing …

Integrated circuits, the key components in thousands of electronic and computer products,
are generally built layer by layer on a silicon substrate. One common technique for forming …

(56) References Cited Woessner & Kluth, PA. US PATENT DOCUMENTS(57) ABSTRACT
3,381,114 A 4/1968 Nakanuma.................. 219/385 A method of enhanced atomic layer …

3,357,961 A 12/1967 Makowski et al. 3,381,114. A 4, 1968 Nakanuma 4,058.430 A 11, 1977
Suntola et al. 4,215,156 A 7, 1980 Dalal et al. 4,302.620 A 11, 1981 Chu 4.333, 808 A …

US7369435B2 - Write once read only memory employing floating gates - Google Patents
US7369435B2 - Write once read only memory employing floating gates - Google Patents Write …

(57) ABSTRACT A dielectric? lm containing HfOZ/ZrO2 nanolaminates and a method of
fabricating such a dielectric? lm produce a reliable gate dielectric having an equivalent …

Fuyuki, Takashi, et al.,“Initial stage of ultra-thin SiO2 formation at low temperatures using
activated oxygen'. Applied Surface Science,(1997), pp. 123-126. Gartner, M." …