Heterostructures with biaxially compressed, As‐rich InAsSb are being investigated as active
regions for midwave infrared emitters. InAs1− x Sb x/In1− x Ga x As (x≊ 0.1) strained‐layer …

The relaxation of patterned, compressively strained, epitaxial Si 0.7 Ge 0.3 films transferred
to borophosphorosilicate (BPSG) glass by a wafer-bonding and etch-back technique was …

Thin strained Si layers grown on SiGe layers graded to 20% Ge were studied for resistance
to relaxation. It was observed that in the presence of∼ 10 5/cm 2 threading dislocations from …

Silicon germanium alloys have received considerable attention in recent years for their
potential application in advanced electronic and optoelectronic devices. 1–5 The oxidation …

Sb surface segregation and doping during Si (100) molecular beam epitaxy were studied for
growth temperatures of 320–500° C. Surface segregation was analyzed by depth profiling …

High resolution X-ray diffraction measurements have been done on Si (001)-based
structures grown by molecular beam epitaxy (MBE). By systematically varying the angle of …

Abstract Two inch homogeneous Si 0.5 Ge 0.5 bulk single crystals were grown by the
traveling liquidus zone (TLZ) method for fabricating substrates for strained Si and strained …

Relaxed, high-quality, compositionally step-graded InAs y P 1− y layers with an As
composition of y= 0.4, corresponding to a lattice mismatch of∼ 1.3% were grown on InP …

Abstract An epi-Ge/Pr 2 O 3/Si (1 1 1) layer structure produced by consecutive steps of
epitaxial deposition and annealing is used to demonstrate a technique to measure the …

We report on the in situ oxidation of a series of Si–Ge alloy layers grown epitaxially on a
(100) Si substrate. The alloy compositions of the layers varied in Ge composition from 1.8 …