H Yin, R Huang, KD Hobart, Z Suo, TS Kuan… - Journal of Applied …, 2002 - pubs.aip.org
The relaxation of patterned, compressively strained, epitaxial Si 0.7 Ge 0.3 films transferred to borophosphorosilicate (BPSG) glass by a wafer-bonding and etch-back technique was …
SB Samavedam, WJ Taylor, JM Grant… - Journal of Vacuum …, 1999 - pubs.aip.org
Thin strained Si layers grown on SiGe layers graded to 20% Ge were studied for resistance to relaxation. It was observed that in the presence of∼ 10 5/cm 2 threading dislocations from …
SJ Kilpatrick, RJ Jaccodine, PE Thompson - Journal of applied physics, 1997 - pubs.aip.org
Silicon germanium alloys have received considerable attention in recent years for their potential application in advanced electronic and optoelectronic devices. 1–5 The oxidation …
KD Hobart, DJ Godbey, ME Twigg, M Fatemi… - Surface Science, 1995 - Elsevier
Sb surface segregation and doping during Si (100) molecular beam epitaxy were studied for growth temperatures of 320–500° C. Surface segregation was analyzed by depth profiling …
GV Hansson, HH Radamsson, WX Ni - Journal of Materials Science …, 1995 - Springer
High resolution X-ray diffraction measurements have been done on Si (001)-based structures grown by molecular beam epitaxy (MBE). By systematically varying the angle of …
K Kinoshita, Y Arai, O Nakatsuka… - Japanese Journal of …, 2015 - iopscience.iop.org
Abstract Two inch homogeneous Si 0.5 Ge 0.5 bulk single crystals were grown by the traveling liquidus zone (TLZ) method for fabricating substrates for strained Si and strained …
Relaxed, high-quality, compositionally step-graded InAs y P 1− y layers with an As composition of y= 0.4, corresponding to a lattice mismatch of∼ 1.3% were grown on InP …
P Zaumseil - Journal of Physics D: Applied Physics, 2008 - iopscience.iop.org
Abstract An epi-Ge/Pr 2 O 3/Si (1 1 1) layer structure produced by consecutive steps of epitaxial deposition and annealing is used to demonstrate a technique to measure the …
SJ Kilpatrick, RJ Jaccodine, PE Thompson - Journal of applied physics, 2003 - pubs.aip.org
We report on the in situ oxidation of a series of Si–Ge alloy layers grown epitaxially on a (100) Si substrate. The alloy compositions of the layers varied in Ge composition from 1.8 …