[HTML][HTML] Evaluation of the thermal stability of TiW/Cu heterojunctions using a combined SXPS and HAXPES approach
Power semiconductor device architectures require the inclusion of a diffusion barrier to
suppress or at best prevent the interdiffusion between the copper metallization interconnects …
suppress or at best prevent the interdiffusion between the copper metallization interconnects …
Single-phase polycrystalline Ti1− xWxN alloys (0⩽ x⩽ 0.7) grown by UHV reactive magnetron sputtering: Microstructure and physical properties
JH Moser, F Tian, O Haller, DB Bergstrom, I Petrov… - Thin solid films, 1994 - Elsevier
Single-phase 300 nm thick Bl-NaCl structure polycrystalline Ti 1− x W x N alloys, with
compositions extending from TiN to Ti 0.3 W 0.7 N, have been grown at 500° C on …
compositions extending from TiN to Ti 0.3 W 0.7 N, have been grown at 500° C on …
Al/TixW1− x metal/diffusion-barrier bilayers: interfacial reaction pathways and kinetics during annealing
TixW1x films are widely used as barrier layers for preventing Al/Si interdiffusion in
microelectronic devices. 1 There have, therefore, been a number of studies examining the …
microelectronic devices. 1 There have, therefore, been a number of studies examining the …
Trace analysis for microelectronically relevant heavy metals in high-purity titanium with isotope dilution mass spectrometry
B Beer, KG Heumann - Analytical Chemistry, 1993 - ACS Publications
0.07; Cu= 1; Cd= 1.7; Ni= 4; Pb= 6; and Fe= 35. Three titanium samples of different purity
were ana-lyzed with concentrations in the following range (in gg/g): U, Th,(< 0.07 x 10"* 123 …
were ana-lyzed with concentrations in the following range (in gg/g): U, Th,(< 0.07 x 10"* 123 …
Electrical characteristics of TaSi2 p+ Si and TiSi2 p+ Si contacts formed by rapid thermal annealing
HC Cho, SH Paek, JS Choi, YS Hwang - Thin solid films, 1992 - Elsevier
Silicidation reactions of sputtered tantalum and titanium thin films on p+ Si are performed
by rapid thermal annealing with a halogen lamp. Ohmic contacts of TaSi 2 and TiSi 2 to p+ …
by rapid thermal annealing with a halogen lamp. Ohmic contacts of TaSi 2 and TiSi 2 to p+ …
Reaction paths and kinetics of aluminide formation in Al/epitaxial‐W (001) model diffusion barrier systems
Single‐crystal bcc W (001) layers, 140 nm thick, were grown on MgO (001) substrates by
ultrahigh‐vacuum (UHV) magnetron sputter deposition at T s= 600° C. Al overlayers, 190 nm …
ultrahigh‐vacuum (UHV) magnetron sputter deposition at T s= 600° C. Al overlayers, 190 nm …
Barrier Characteristics of Chemical Vapor Deposited Amorphous‐like Tungsten Silicide with In Situ Nitrogen Plasma Treatment
KM Chang, IC Deng, TH Yeh… - Journal of the …, 1999 - iopscience.iop.org
A major problem encountered with Al metallizations occurs when Al and Si are in direct
contact. The Al thin film is a polycrystalline structure that has grain boundaries, and these …
contact. The Al thin film is a polycrystalline structure that has grain boundaries, and these …
Modeling and investigation of current transport phenomena in schottky structures
Y Zeng - 1993 - digitalcommons.njit.edu
We have used a numerical method to describe the importance of the contribution of
generation-recombination current to the IV characteristics of Schottky barrier contacts. The …
generation-recombination current to the IV characteristics of Schottky barrier contacts. The …