Monolithic 650-V dual-gate p-GaN bidirectional switch
G Baratella, U Chatterjee, O Syshchyk… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article is about the study and characterization of a monolithically integrated dual-gate
bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line …
bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line …
A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology
U Chatterjee, H De Pauw, O Syshchyk, T Cosnier… - Solid-State …, 2023 - Elsevier
To unlock the full potential of fast switching GaN technology, monolithic integration of power
circuit is crucial. GaN-IC ensures a fast efficient switching operation by reducing the parasitic …
circuit is crucial. GaN-IC ensures a fast efficient switching operation by reducing the parasitic …
Substrate Network Modeling for Lateral p-GaN Gate HEMTs in a 200V GAN-IC Platform
In a monolithically integrated GaN-IC, the parasitic inductance, capacitance and resistance
between the driver and the half-bridge is greatly reduced. In a GaN-IC platform on SOI …
between the driver and the half-bridge is greatly reduced. In a GaN-IC platform on SOI …
[DOC][DOC] A Fully Integrated HB Driver Circuit in All-GaN GANIC Technology
U Chatterjee, A Magnani, H De Pauw, O Syshchyk… - congressos.urv.cat
It is well known that GaN technology can drive the high frequency operation for power
circuits beyond today's limit. However, this extremely good frequency capability introduces …
circuits beyond today's limit. However, this extremely good frequency capability introduces …