Advances in ZnO: Manipulation of defects for enhancing their technological potentials
This review attempts to compile the physics and chemistry of defects in zinc oxide (ZnO), at
both, the fundamental and application levels. The defects, either inherent ones or introduced …
both, the fundamental and application levels. The defects, either inherent ones or introduced …
Zinc oxide light-emitting diodes: a review
F Rahman - Optical Engineering, 2019 - spiedigitallibrary.org
This paper presents a compact survey of the various material schemes and device structures
that have been explored in the quest toward developing light-emitting diodes (LEDs) based …
that have been explored in the quest toward developing light-emitting diodes (LEDs) based …
Electrical characterization of Si/ZnO nanorod PN heterojunction diode
The electrical characterization of p‐Silicon (Si) and n‐Zinc oxide (ZnO) nanorod
heterojunction diode has been performed. ZnO nanorods were grown on p‐Silicon substrate …
heterojunction diode has been performed. ZnO nanorods were grown on p‐Silicon substrate …
New approaches for calculating absolute surface energies of wurtzite (0001)/(0001): A study of ZnO and GaN
The accurate absolute surface energies of (0001)/(000 1) surfaces of wurtzite structures
are crucial in determining the thin film growth mode of important energy materials. However …
are crucial in determining the thin film growth mode of important energy materials. However …
Particle size effects on the hydrogen sensing properties of Pd/ZnO Schottky contacts fabricated by sol–gel method
ZnO thin films grown on n-Si substrates using sol–gel spin coating method were annealed in
Ar atmosphere at 450° C, 550° C and 650° C temperatures. Three types of Pd/n-ZnO/n …
Ar atmosphere at 450° C, 550° C and 650° C temperatures. Three types of Pd/n-ZnO/n …
The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy–A chemical inert interface with significant band discontinuities
Y Zhang, N Lin, Y Li, X Wang, H Wang, J Kang… - Scientific reports, 2016 - nature.com
ZnO/SiC heterojunctions show great potential for various optoelectronic applications (eg,
ultraviolet light emitting diodes, photodetectors and solar cells). However, the lack of a …
ultraviolet light emitting diodes, photodetectors and solar cells). However, the lack of a …
Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate
Heterostructures of wurtzite based devices have attracted great research interest because of
the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN …
the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN …
Growth of ZnO (0001) on GaN (0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy
Plasma-assisted molecular beam epitaxy was used to grow ZnO (0001) layers on GaN
(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N …
(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N …
Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy
We demonstrate crack-free ZnO/GaN distributed Bragg reflectors (DBRs) grown by hybrid
plasma-assisted molecular beam epitaxy using the same growth chamber for continuous …
plasma-assisted molecular beam epitaxy using the same growth chamber for continuous …
Expanding Thermal Plasma Deposition of Al‐Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms
BL Williams, MV Ponomarev… - Plasma Processes …, 2016 - Wiley Online Library
This work presents a review of expanding thermal plasma–chemical vapour deposition (ETP‐
CVD) of Al‐doped ZnOtransparent conducting oxides (TCOs), alongside new results …
CVD) of Al‐doped ZnOtransparent conducting oxides (TCOs), alongside new results …