Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV)
lithography was experimentally studied. A carbon film was found to have grown under …

In recent years, EUV lithography scanner systems have entered high-volume manufacturing
for state-of-the-art integrated circuits, with critical dimensions down to 10 nm. This …

Cleaning of contamination of optical surfaces by amorphous carbon (aC) is highly relevant
for extreme ultraviolet (EUV) lithography. We have studied the mechanisms for aC removal …

In this study, the feasibility was explored of realizing in-situ and non-destructive self-cleaning
of the multilayers mirror (MLM) by utilizing hydrogen plasma at low input power (< 10 W) …

Extreme ultraviolet (EUV) lithography produces 13.5 nm light by irradiating a droplet of
molten Sn with a laser, creating a dense, hot laser-produced plasma and ionizing the Sn to …

Surface impurities can have a significant influence on hydrogen uptake of materials.
Examples such as the hydrogen spillover effect demonstrate that even very small surface …

One of the critical issues in lithography using extreme ultraviolet (EUV) light is tin
contamination of the EUV collector mirrors in the tin-based LPP-EUV light source. The …

In the past years, EUV lithography scanner systems have entered high-volume
manufacturing for state-of-the-art integrated circuits (IC), with critical dimensions down to 10 …

In this paper we present results of measurements and global modelling of low-pressure
inductively coupled H 2 plasma which is suitable for surface cleaning applications. The …

Inside extreme-ultraviolet (EUV) lithography machines, a hydrogen plasma is generated by
ionization of the background gas by EUV photons. This plasma is essential for preventing …