The development of defect populations after proton irradiation of n-type 4 H-SiC and
subsequent annealing experiments is studied by means of deep level transient (DLTS) and …

Fluorescent paramagnetic defects in solids have become attractive systems for quantum
information processing in recent years. One of the leading contenders is the negatively …

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to
its commercial availability and established techniques for electrical and optical …

Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits
for quantum technologies. Their synthesis, however, presents considerable challenges, and …

NCV Si− centers in SiC [nitrogen-vacancy (NV) centers], which produce near-infrared (NIR)
photoluminescence (PL) at room temperature, is expected to have applications as quantum …

This paper presents a theoretical study of the electronic and dynamic properties of silicon
vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several …

Defect engineering in wide-gap semiconductors is important in controlling the performance
of single-photon emitter devices. The effective incorporation of defects depends strongly on …

The full realization of spin qubits for quantum technologies relies on the ability to control and
design the formation processes of spin defects in semiconductors and insulators. We …

We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC)
using a combination of theoretical and experimental methodologies. The VC, commonly …

Efficient power distribution to multiple receivers with controlled amounts is critical for
wireless communication and sensing systems. Previous efforts have attempted to improve …