40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …

A review of radiation-induced displacement damage effects in semiconductor devices is
presented, with emphasis placed on silicon technology. The history of displacement damage …

Interface traps generally are not considered to be likely sources of low-frequency (LF) noise
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …

There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …

Already shortly after the successful launch of the European Space Agency satellite Aeolus in
August 2018, it turned out that dark current signal anomalies of single pixels (so-called hot …

<? Pub Dtl=""?> Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are
designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 …

Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random
Telegraph Signals in CMOS Image Sensors Page 1 IEEE TRANSACTIONS ON NUCLEAR …

Effects of hot pixels on pixel performance in light and dark environments have been
investigated in pinned photodiode 0.18 μm backside illuminated CMOS image sensors …

This paper focuses on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state
image sensors. The DC-RTS is investigated in several bulk materials, for different surface …

This paper focuses on radiation-induced dose and single event effects in digital CMOS
image sensors using pinned photodiodes. Proton irradiations were used to study cumulative …