Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
[HTML][HTML] Hybrid 2D–CMOS microchips for memristive applications
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
RRAM-based synapse devices for neuromorphic systems
Hardware artificial neural network (ANN) systems with high density synapse array devices
can perform massive parallel computing for pattern recognition with low power consumption …
can perform massive parallel computing for pattern recognition with low power consumption …
Resistive memory-based analog synapse: The pursuit for linear and symmetric weight update
This article reviews the recent developments in a type of random access memory (RAM)
called resistive RAM (RRAM) for the analog synapse, which is an important building block …
called resistive RAM (RRAM) for the analog synapse, which is an important building block …
Low store energy, low VDDmin, 8T2R nonvolatile latch and SRAM with vertical-stacked resistive memory (memristor) devices for low power mobile applications
PF Chiu, MF Chang, CW Wu… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
Many mobile SoC chips employ a “two-macro” approach including volatile and nonvolatile
memory macros (ie SRAM and Flash), to achieve high-performance or low-voltage power-on …
memory macros (ie SRAM and Flash), to achieve high-performance or low-voltage power-on …
Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
The improved resistive switching (RS) characteristics of Pt/HfO 2/Ti structured RRAM are
demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma …
demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma …
A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing
Y Ran, Y Pei, Z Zhou, H Wang, Y Sun, Z Wang, M Hao… - Nano Research, 2023 - Springer
Mott insulator material, as a kind of strongly correlated electronic system with the
characteristic of a drastic change in electrical conductivity, shows excellent application …
characteristic of a drastic change in electrical conductivity, shows excellent application …
TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
J Shin, I Kim, KP Biju, M Jo, J Park, J Lee… - Journal of Applied …, 2011 - pubs.aip.org
We report a simple metal-insulator-metal (MIM)-type selection device that can alleviate the
sneak current path in cross-point arrays. By connecting a nanometer-scale Pt/TiO 2/TiN …
sneak current path in cross-point arrays. By connecting a nanometer-scale Pt/TiO 2/TiN …