The concept of chemical mechanical planarization (CMP) was invented in IBM in the early
1980s by Klaus D. Beyer in an attempt to create a highly planar surface and enable …

This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …

Plasma etching technologies such as reactive ion etching (RIE), isotropic etching, and
ashing/plasma cleaning are the currently used booster technologies for manufacturing all …

The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

In this article, the long-lasting antifogging capability of large-aperture optical components
was obtained by the in-situ plasma treatment. Water contact angle and surface free energy …

The introduction of ultra low-k materials in copper technology has been much slower than
anticipated in the ITRS Roadmap. The introduction of porosity in low-k materials has …

Fluorine cold plasmas produced by an electrical discharge in SF 6, CF 4, CHF 3 or C 4 F 8
gases, principally, have two main fields of application. The first and historical application is …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Plasma damage to low k dielectric materials was investigated from a mechanistic point of
view. Low k dielectric films were treated by Ar, O 2⁠, N 2⁠, N 2∕ H 2⁠, and H 2 plasmas in …

2003/0028243 A1 2/2003 Bates et al. 2003, OO64095 A1 4/2003 Martin et al..................
424/451 2003/008.3646 A1* 5, 2003 Sirhan et al.... 604,891.1 2003. O138645 A1 7/2003 …