Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
extremely thin amorphous indium oxide transistors
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …
panels for upward of a decade, and have recently been considered as promising back‐end …
Scaled indium oxide transistors fabricated using atomic layer deposition
To continue to improve integrated circuit performance and functionality, scaled transistors
with short channel lengths and low thickness are needed. But further scaling of silicon …
with short channel lengths and low thickness are needed. But further scaling of silicon …
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-
deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is …
deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is …
Scaled atomic-layer-deposited indium oxide nanometer transistors with maximum drain current exceeding 2 A/mm at drain voltage of 0.7 V
In this work, we demonstrate scaled back-endof-line (BEOL) compatible indium oxide (In 2 O
3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm …
3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm …
High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction
Abstract In this paper, In0. 22ZnδSn0. 78− δO1. 89− δ (δ= 0.55) films with a single spinel
phase are successfully grown at the low temperature of 300° C through careful cation …
phase are successfully grown at the low temperature of 300° C through careful cation …
Vertically integrated electronics: new opportunities from emerging materials and devices
Abstract Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate
a large number of transistor devices per unit area. This approach has emerged to …
a large number of transistor devices per unit area. This approach has emerged to …
Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing …
In this article, we demonstrate atomic-layerdeposited (ALD) indium oxide (In 2 O 3)
transistors with a record high drain current of 2.2 A/mm at V DS of 0.7 V among oxide …
transistors with a record high drain current of 2.2 A/mm at V DS of 0.7 V among oxide …
Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors
Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the
back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional …
back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional …
Atomically thin indium-tin-oxide transistors enabled by atomic layer deposition
In this work, indium-tin-oxide (ITO) transistors with atomically thin channel thickness () of 2.1
nm realized by atomic layer deposition (ALD) are demonstrated. A maximum ON-state …
nm realized by atomic layer deposition (ALD) are demonstrated. A maximum ON-state …