Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
Toward electrically driven semiconductor nanowire lasers
Semiconductor nanowire (NW) lasers are highly promising for making new-generation
coherent light sources with the advantages of ultra-small size, high efficiency, easy …
coherent light sources with the advantages of ultra-small size, high efficiency, easy …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”
In this paper, we review the recent developments (in years 2010–2011) of energy-saving
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green-and red-emitting InGaN quantum wells
(QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for …
(QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for …
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …