2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …
discovered through the extensive experimental and theoretical efforts of chemists, material …
Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their
immense potential for scientific breakthroughs and technological innovations. While some …
immense potential for scientific breakthroughs and technological innovations. While some …
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Epitaxy—the growth of a crystalline material on a substrate—is crucial for the semiconductor
industry, but is often limited by the need for lattice matching between the two material …
industry, but is often limited by the need for lattice matching between the two material …
Integration of bulk materials with two-dimensional materials for physical coupling and applications
Hybrid heterostructures are essential for functional device systems. The advent of 2D
materials has broadened the material set beyond conventional 3D material-based …
materials has broadened the material set beyond conventional 3D material-based …
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
There are numerous studies on the growth of planar films on sp 2-bonded two-dimensional
(2D) layered materials. However, it has been challenging to grow single-crystalline films on …
(2D) layered materials. However, it has been challenging to grow single-crystalline films on …
[PDF][PDF] Graphene-based LED: From principle to devices
Group-III nitride (III-N) films have numerous applications in LEDs, lasers, and high-
power/high-frequency electronic devices because of their direct wide band gap, high …
power/high-frequency electronic devices because of their direct wide band gap, high …
Van der Waals epitaxy of iii‐nitride semiconductors based on 2D materials for flexible applications
III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …
Applications of remote epitaxy and van der Waals epitaxy
Epitaxy technology produces high-quality material building blocks that underpin various
fields of applications. However, fundamental limitations exist for conventional epitaxy, such …
fields of applications. However, fundamental limitations exist for conventional epitaxy, such …
新型石墨烯基LED 器件: 从生长机理到器件特性
陈召龙， 高鹏， 刘忠范 - 物理化学学报, 2019 - whxb.pku.edu.cn
Ⅲ 族氮化物因具有禁带宽度大, 击穿电压高, 电子饱和漂移速度大, 稳定性高等优异特性而广泛
应用在发光二极管(LED), 激光器以及高频器件中. 目前Ⅲ 族氮化物薄膜通常是异质外延生长在 …
应用在发光二极管(LED), 激光器以及高频器件中. 目前Ⅲ 族氮化物薄膜通常是异质外延生长在 …
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer
Y Alaskar, S Arafin, D Wickramaratne… - Advanced Functional …, 2014 - Wiley Online Library
Van der Waals growth of GaAs on silicon using a two‐dimensional layered material,
graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer …
graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer …