Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Recent progress in GeSn growth and GeSn-based photonic devices
J Zheng, Z Liu, C Xue, C Li, Y Zuo… - Journal of …, 2018 - iopscience.iop.org
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
A Gassenq, F Gencarelli, J Van Campenhout… - Optics express, 2012 - opg.optica.org
A surface-illuminated photoconductive detector based on Ge_0. 91Sn_0. 09 quantum wells
with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2 µm …
with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2 µm …
GeSn pin detectors integrated on Si with up to 4% Sn
M Oehme, M Schmid, M Kaschel, M Gollhofer… - Applied Physics …, 2012 - pubs.aip.org
GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up
to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure …
to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure …
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
F Gencarelli, B Vincent… - ECS Journal of Solid …, 2013 - iopscience.iop.org
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-
grown GeSn layers with Sn content in the range 6.4–12.6 at.%. A positive deviation from …
grown GeSn layers with Sn content in the range 6.4–12.6 at.%. A positive deviation from …
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
M Oehme, K Kostecki, M Schmid, F Oliveira, E Kasper… - Thin Solid Films, 2014 - Elsevier
Strained and unstrained GeSn layers on Si substrates were grown with Sn contents up to
20% and 25%, respectively. All metastable layer structures were fabricated by means of an …
20% and 25%, respectively. All metastable layer structures were fabricated by means of an …
Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
Film growth and reaction kinetics studies have shown that trigermane (Ge 3 H 8) is a
superior Ge source for the epitaxial synthesis of Ge 1− y Sn y/Si (100) alloys using ultra-high …
superior Ge source for the epitaxial synthesis of Ge 1− y Sn y/Si (100) alloys using ultra-high …
Reduced pressure CVD growth of Ge and Ge1− xSnx alloys
The epitaxial growth of Ge and GeSn alloys on Si (100) by Reduced Pressure Chemical
Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the …
Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the …