Quantum dots derived from two-dimensional transition metal dichalcogenides: Synthesis, optical properties and optoelectronic applications
CH Chiu, YT Chen, JL Shen - Nanotechnology, 2023 - iopscience.iop.org
Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have
attracted a lot of attention due to their interesting fundamental properties and various …
attracted a lot of attention due to their interesting fundamental properties and various …
Tungsten disulfide quantum dots: Synthesis, structure, properties and biological applications
Y Guo, Y Liu, Y Xiang - Dyes and Pigments, 2025 - Elsevier
Transition metal dichalcogenides have attracted considerable attention due to their
adjustable bandgap structures. When their size is further reduced, quantum dots with …
adjustable bandgap structures. When their size is further reduced, quantum dots with …
Wrinkled Graphene Structure and Localized Surface Plasmon Resonance Induced Stretchable White Random Lasers Based on GLN‐functionalized 2D WS2 …
YH Chien, GZ Lu, SE Li, YT Chen… - Advanced Optical …, 2024 - Wiley Online Library
This study presents investigations into the fabrication, characterization, and performance
analysis of stretchable white random lasers based on 2D glutamine (GLN)‐functionalized …
analysis of stretchable white random lasers based on 2D glutamine (GLN)‐functionalized …
Unveiling Negative Differential Resistance and Superionic Conductivity: Water Anchored on Layered Materials
Unravelling the perplexing nature of negative differential resistance (NDR) in 2D transition
metal dichalcogenide (2D TMD) devices, especially regarding intrinsic properties, is …
metal dichalcogenide (2D TMD) devices, especially regarding intrinsic properties, is …
Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides
DN Feria, QZ Huang, CS Yeh, SX Lin, DY Lin… - …, 2024 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is a promising wide bandgap semiconductor that is
viewed as a contender for the next generation of high-power electronics due to its high …
viewed as a contender for the next generation of high-power electronics due to its high …
Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide
Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT)
mechanism has recently shown great potential in improving the performance of various …
mechanism has recently shown great potential in improving the performance of various …
2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory
SE Li, GZ Lu, JL Shen, MJ Wu, YT Chen… - Advanced Optical …, 2024 - Wiley Online Library
Nonvolatile memory is an indispensable component of electronic devices. However, the
current technology makes it difficult to satisfy the emerging big data demand. To circumvent …
current technology makes it difficult to satisfy the emerging big data demand. To circumvent …