BEOL-compatible superlattice FEFET analog synapse with improved linearity and symmetry of weight update
Pseudo-crossbar arrays using ferroelectric field effect transistor (FEFET) mitigates weight
movement and allows in situ vector–matrix multiplication (VMM), which can significantly …
movement and allows in situ vector–matrix multiplication (VMM), which can significantly …
Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress
Flexible radio frequency (RF) transistors play an important role in the fast-growing wearable
smart sensors for data communication. However, the scaling capability and high-speed …
smart sensors for data communication. However, the scaling capability and high-speed …
High-speed emerging memories for AI hardware accelerators
Applications of artificial intelligence (AI) necessitate AI hardware accelerators able to
efficiently process data-intensive and computation-intensive AI workloads. AI accelerators …
efficiently process data-intensive and computation-intensive AI workloads. AI accelerators …
Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency
In this work, capacitorless memory cells using high mobility ultrathin indium-tin-oxide (ITO)
channel are successfully demonstrated, addressing the retention and latency challenges in …
channel are successfully demonstrated, addressing the retention and latency challenges in …
Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors
Charge transport in amorphous semiconductors is considerably more complicated than the
process in crystalline materials due to abundant localized states. In addition to device-scale …
process in crystalline materials due to abundant localized states. In addition to device-scale …
Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
D Kim, JH Kim, WS Choi, TJ Yang, JT Jang… - Scientific Reports, 2022 - nature.com
Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated
with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line …
with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line …
Indium-gallium-zinc-oxide (IGZO) nanowire transistors
We report high-performance amorphous Indium-Gallium-Zinc-Oxide nanowire field-effect
transistors (-IGZO NW-FETs) featuring an ultrascaled nanowire width () down to~ 20 nm. The …
transistors (-IGZO NW-FETs) featuring an ultrascaled nanowire width () down to~ 20 nm. The …
Indium-Tin-Oxide Thin-Film Transistors with High Field-Effect Mobility (129.5 cm2/V·s) and Low Thermal Budget (150 °C)
In this letter, we demonstrate high performance Indium-Tin-Oxide thin-film transistors (ITO
TFTs) with low thermal budget of process temperature less than 150° C and a record high …
TFTs) with low thermal budget of process temperature less than 150° C and a record high …
[图书][B] Semiconductor Memory Devices and Circuits
S Yu - 2022 - taylorfrancis.com
This book covers semiconductor memory technologies from device bit-cell structures to
memory array design with an emphasis on recent industry scaling trends and cutting-edge …
memory array design with an emphasis on recent industry scaling trends and cutting-edge …
Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications
In the past several decades, the density and performance of transistors in a single chip have
been increasing based on Moore's Law. However, the slowdown of feature size reduction …
been increasing based on Moore's Law. However, the slowdown of feature size reduction …