Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
[HTML][HTML] The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges
KF Rahman, S Falina, MFP Mohamed… - Applied Physics …, 2024 - pubs.aip.org
It is only recently that the electric vehicle (EV) has evolved into a contemporary invention.
There has been a rapid acceleration in the development of EVs in a number of nations in …
There has been a rapid acceleration in the development of EVs in a number of nations in …
Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT
The modeling of self-heating in GaN-based devices is presented in this paper. A setup for
DC I–V and short pulse I–V was used to characterize the device. This paper used four …
DC I–V and short pulse I–V was used to characterize the device. This paper used four …
Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances
E Farahzad, A Naderi - Journal of Materials Science: Materials in …, 2022 - Springer
In the present study, a silicon on insulator metal–semiconductor FET (SOI MESFET) with
embedded metal and L-shaped oxide layers (EMLO) is introduced. This structure consists of …
embedded metal and L-shaped oxide layers (EMLO) is introduced. This structure consists of …
Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect
S Sun, Y Zhang, Y Si, J Xiong, X Luo - Journal of Electronic Materials, 2024 - Springer
A novel AlGaN/GaN high-electron mobility transistor (HEMT) is put forward to promote its
breakdown characteristics and anti-single-event transient (SET) effect. The features of the …
breakdown characteristics and anti-single-event transient (SET) effect. The features of the …
Effects of ferroelectric materials (PZT) on breakdown voltage and DC parameter in MOS-HEMT power transistor for high-frequency applications
C Huang, Y Wang - Emergent Materials, 2022 - Springer
The successful use and epitaxial growth of a thin layer of a lead zirconate titanate (PZT) thin
film on GaN offered have shown excellent results based on available experimental samples …
film on GaN offered have shown excellent results based on available experimental samples …
The Design of High Frequency LLC Switching Power Supply Based on GaN Device
C Wu, H Huang, H Wang - The proceedings of the 16th Annual …, 2022 - Springer
Faced with the need to continue to improve the efficiency of DC-DC converter, the third
generation of new semiconductor materials, gallium nitride (GaN) devices came into being …
generation of new semiconductor materials, gallium nitride (GaN) devices came into being …