Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …

This chapter is a general introduction to the properties and applications of gallium nitride
(GaN) and related materials. In the first part, after an historical background on the relevant …

This book aims at offering the master students—and probably to other ones—who are
studying the physics of wide bandgap semi-conductors, the elements required to rapidly …

We investigate carrier localization in the InAs/AlSb type-II superlattice (T2SL) material
system using temperature-and excitation power (I ex)-dependent photoluminescence (PL) …

Optical properties of GaN/Al 0.2 Ga 0.8 N multiple quantum wells grown with semi-polar (10-
11) orientation on patterned 7-off Si (001) substrates have been investigated. Studies …

Advanced optical spectroscopy in nitrides and oxides: Some of the progress made during the
past ten years - ScienceDirect Skip to main contentSkip to article Elsevier logo Journals & Books …

In this chapter are reviewed the basic concepts required to compute the band structure of
quantum wells. Then we discuss the variational treatments of the exciton binding energies …

The electronic properties of InGaN quantum wells with In composition fluctuation were
investigated within a tight‐binding model, using a new sp3s* d5 parametrization allowing for …