Electrical contacts to one-and two-dimensional nanomaterials
Existing models of electrical contacts are often inapplicable at the nanoscale because there
are significant differences between nanostructures and bulk materials arising from unique …
are significant differences between nanostructures and bulk materials arising from unique …
CMOS-compatible silicon nanowire field-effect transistor biosensor: Technology development toward commercialization
Owing to their two-dimensional confinements, silicon nanowires display remarkable optical,
magnetic, and electronic properties. Of special interest has been the development of …
magnetic, and electronic properties. Of special interest has been the development of …
Highly ordered vertical silicon nanowire array composite thin films for thermoelectric devices
The fabrication and characterization of silicon nanowire (NW) array/spin-on glass (SOG)
composite films for thermoelectric devices are presented. Interference lithography was used …
composite films for thermoelectric devices are presented. Interference lithography was used …
End-bonded contacts of tellurium transistors
The development of novel low-dimensional materials makes the metallic contact to
nanostructure facing challenges. Compared to side contacts, end-bonded contacts are …
nanostructure facing challenges. Compared to side contacts, end-bonded contacts are …
The growth and applications of silicides for nanoscale devices
Metal silicides have been used in silicon technology as contacts to achieve high device
performance and desired device functions. The growth and applications of silicide materials …
performance and desired device functions. The growth and applications of silicide materials …
Orientation dependence of nickel silicide formation in contacts to silicon nanowires
The orientation dependence of Ni silicide phase formation in the silicidation of silicon
nanowires (SiNWs) by Ni has been studied. SiNWs with a [112] growth direction contacted …
nanowires (SiNWs) by Ni has been studied. SiNWs with a [112] growth direction contacted …
High-performance silicon nanowire field-effect transistor with silicided contacts
Undoped silicon nanowire (Si NW) field-effect transistors (FETs) with a back-gate
configuration have been fabricated and characterized. A thick (200 nm) Si 3 N 4 layer was …
configuration have been fabricated and characterized. A thick (200 nm) Si 3 N 4 layer was …
Correlating dopant distributions and electrical properties of boron-doped silicon nanowires
RA Schlitz, DE Perea, JL Lensch-Falk… - Applied Physics …, 2009 - pubs.aip.org
Quantitative nonuniform radial doping profiles in vapor liquid solid grown boron-doped
silicon nanowires are correlated with axial variations in electrical properties. Boron …
silicon nanowires are correlated with axial variations in electrical properties. Boron …
Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device
The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO 2/Au–
Ni) Schottky barrier in SnO 2 nanowires were investigated over a wide temperature range …
Ni) Schottky barrier in SnO 2 nanowires were investigated over a wide temperature range …
Critical Factors in the Growth of Hyperdoped Germanium Microwires by Electrochemical Liquid–Liquid–Solid Method
Factors that affect crystalline growth of germanium (Ge) micro-and nanowires by the
electrochemical liquid–liquid solid (ec-LLS) method in water have been identified. Alloys of …
electrochemical liquid–liquid solid (ec-LLS) method in water have been identified. Alloys of …