Synthesis and modification of silicon nanosheets and other silicon nanomaterials

H Okamoto, Y Sugiyama… - Chemistry–A European …, 2011 - Wiley Online Library
Silicon nanomaterials and nanostructures exhibit different properties from those of bulk
silicon materials based on quantum confinement effects. They are expected to lead to the …

Origin and evolution of photoluminescence from Si nanocrystals embedded in a matrix

XX Wang, JG Zhang, L Ding, BW Cheng, WK Ge… - Physical Review B …, 2005 - APS
A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in
a silicon-rich SiO 2 matrix is reported. The PL spectra consist of three Gaussian bands …

Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices

AM Hartel, D Hiller, S Gutsch, P Löper, S Estradé… - Thin Solid Films, 2011 - Elsevier
Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using
plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the …

Silicon nanocrystal formation in annealed silicon-rich silicon oxide films prepared by plasma enhanced chemical vapor deposition

N Daldosso, G Das, S Larcheri, G Mariotto… - Journal of Applied …, 2007 - pubs.aip.org
Silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition
with different total Si contents (from 39 to 46 at.%⁠) have been annealed at increasing …

Photoluminescence of silicon nanocrystals in silicon oxide

L Ferraioli, M Wang, G Pucker… - Journal of …, 2007 - Wiley Online Library
Recent results on the photoluminescence properties of silicon nanocrystals embedded in
silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals …

Nitrogen at the interface and its influence on luminescence and interface defects

D Hiller, S Goetze, F Munnik, M Jivanescu… - Physical Review B …, 2010 - APS
The influence of the high-temperature annealing ambient, ie, N 2 and Ar on size controlled
Si nanocrystals (NCs) ranging from∼ 2 to∼ 6 nm embedded in SiO 2 has been investigated …

[图书][B] Semiconductor nanocrystals and metal nanoparticles: physical properties and device applications

T Chen, Y Liu - 2016 - taylorfrancis.com
Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …

Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites

LE Ramos, E Degoli, G Cantele… - Journal of Physics …, 2007 - iopscience.iop.org
We investigate the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N
and P) impurities in Si nanocrystallites. The structural features and electronic properties of …

Emission efficiency limit of Si nanocrystals

R Limpens, SL Luxembourg, AW Weeber… - Scientific Reports, 2016 - nature.com
One of the important obstacles on the way to application of Si nanocrystals for development
of practical devices is their typically low emissivity. In this study we explore the limits of …

Optical absorption spectra of doped and codoped Si nanocrystallites

LE Ramos, E Degoli, G Cantele, S Ossicini… - Physical Review B …, 2008 - APS
The effects of the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N
and P) impurities on the formation energies, electronic density of states, optical absorption …