A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-rich SiO 2 matrix is reported. The PL spectra consist of three Gaussian bands …
Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the …
Silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition with different total Si contents (from 39 to 46 at.%) have been annealed at increasing …
Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals …
D Hiller, S Goetze, F Munnik, M Jivanescu… - Physical Review B …, 2010 - APS
The influence of the high-temperature annealing ambient, ie, N 2 and Ar on size controlled Si nanocrystals (NCs) ranging from∼ 2 to∼ 6 nm embedded in SiO 2 has been investigated …
Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
LE Ramos, E Degoli, G Cantele… - Journal of Physics …, 2007 - iopscience.iop.org
We investigate the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N and P) impurities in Si nanocrystallites. The structural features and electronic properties of …
R Limpens, SL Luxembourg, AW Weeber… - Scientific Reports, 2016 - nature.com
One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of …
The effects of the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N and P) impurities on the formation energies, electronic density of states, optical absorption …