Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial
growth is the ultimate solution for realizing on‐chip light sources. Tremendous …

We carried out in situ annealing of InP nanowires (NWs) in a metal-organic vapor phase
epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs …

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such
as nanopillars provides a way to spatially modify the optical properties mainly through the …

GaAs-InGaAs-GaAs core–shell–shell nanowire (NW) structures were grown by gas source
molecular beam epitaxy using the selective-area, self-assisted, vapor–liquid–solid method …

III-V nanowire heterostructures can act as sources of single and entangled photons and are
enabling technologies for on-chip applications in future quantum photonic devices. The …

III–V semiconductors outperform Si in many optoelectronics applications due to their high
carrier mobility, efficient light emission and absorption processes, and the possibility to …