Review on first-principles study of defect properties of CdTe as a solar cell absorber

JH Yang, WJ Yin, JS Park, J Ma… - … Science and Technology, 2016 - iopscience.iop.org
CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In
this work, we review the recent first-principles study of defect properties of CdTe and present …

Reflection and transmission of a wave incident on a slab with a time-periodic dielectric function

JR Zurita-Sánchez, P Halevi… - Physical Review A …, 2009 - APS
We present a theoretical description of the response of a dynamic slab, with time-periodic
dielectric function ϵ (t), to a normally incident monochromatic plane wave of frequency ω o …

Effective and Noneffective Recombination Center Defects in Cu2ZnSnS4: Significant Difference in Carrier Capture Cross Sections

J Li, ZK Yuan, S Chen, XG Gong, SH Wei - Chemistry of Materials, 2019 - ACS Publications
By combining the electron–phonon coupling effect and the static coupling formalism, we
calculate, through the first-principles methods, the carrier capture cross sections of the three …

[HTML][HTML] Non-radiative carrier recombination enhanced by two-level process: a first-principles study

JH Yang, L Shi, LW Wang, SH Wei - Scientific reports, 2016 - nature.com
Non-radiative recombination plays an important role in the performance of optoelectronic
semiconductor devices such as solar cells and light-emitting diodes. Most textbook …

GaN-based light-emitting diodes: Efficiency at high injection levels

Ü Ozgur, H Liu, X Li, X Ni, H Morkoc - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Light-emitting diodes (LEDs) have become quite a high-performance device of late and are
revolutionizing the display and illumination sectors of our economy. Due to demands for …

Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination <?format ?>Rates in Bulk Semiconductors

L Shi, LW Wang - Physical review letters, 2012 - APS
Nonradiative carrier recombination is of both applied and fundamental interest. Here a novel
algorithm is introduced to calculate such a deep level nonradiative recombination rate using …

Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy

Y Iwata, RG Banal, S Ichikawa, M Funato… - Journal of Applied …, 2015 - pubs.aip.org
The optical properties of Al-rich AlGaN/AlN quantum wells are assessed by excitation-power-
dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL) …

Comparative study of ab initio nonradiative recombination rate calculations under different formalisms

L Shi, K Xu, LW Wang - Physical Review B, 2015 - APS
Nonradiative carrier recombination is of both great applied and fundamental importance, but
the correct ab initio approaches to calculate it remain to be inconclusive. Here we used five …

Defect-assisted nonradiative recombination in : A comparative study with

Y Xu, JH Yang, S Chen, XG Gong - Physical Review Materials, 2021 - APS
The efficiencies of Cu 2 ZnSn Se 4 (CZTSe) solar cells with a narrower band gap at 1.0 eV
are currently higher than those of Cu 2 ZnSn S 4 (CZTS), with the optimal band gap …

Time-resolved experimental study of carrier lifetime in GaN epilayers

J Mickevičius, MS Shur, RS Fareed, JP Zhang… - Applied Physics …, 2005 - pubs.aip.org
Time-resolved photoluminescence and light-induced transient grating measurements of
GaN epilayers show that the photoluminescence decay can be described by two coupled …