Abstract Effects of surface roughness on electrical properties of a thin insulating film
capacitor with one smooth electrode plate and one rough electrode plate are investigated …

The physico-chemical properties of native oxide layers, spontaneously forming on crystalline
Si wafers in air, can be strictly correlated to the dopant type and doping level. In particular …

In this paper,-Ga 2 O 3 thin films were grown on a p-Si substrate using the sol–gel method.
Structural characterization of the films was performed using X-ray diffraction. Electrical …

Implementing high-performance n-and p-type thin-film transistors (TFTs) for monolithic three-
dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve …

Multilayer capacitors consist of multiple, often hundreds of capacitors connected in parallel
to maximize volumetric efficiency. As the dielectric and electrode layer thicknesses are …

In this study, an atomic layer etching (ALE) process was developed and investigated for the
removal of SiO 2 with CF 4/NH 3. An ammonium fluorosilicate [AFS,(NH 4) 2 SiF 6] layer was …

The early oxidation stages of hydrogen‐terminated single‐crystalline Si (100) exposed to a
diluted N2/N2O atmosphere at 850° C for different durations have been studied by XPS …

We have used proton and As/sup+/implantation to increase the resistivity of conventional Si
(10/spl Omega/-cm) and Si-on-quartz substrates, respectively. A high resistivity of 1.6 M/spl …

The decoupled-plasma nitridation treatment process is an effective recipe for repairing the
trap issues when depositing high-k gate dielectric. Because of this effect, electrical …

This paper demonstrates how the treatment of III-V semiconductor surface affects the
number of defects and ensures the conformal growth of the high-k dielectric thin film. We …