Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

P Salev, L Fratino, D Sasaki, S Bag, Y Takamura… - Physical Review B, 2023 - APS
Phase separation naturally occurs in a variety of magnetic materials and it often has a major
impact on both electric and magnetotransport properties. In resistive switching systems …

Coexisting Phases of Individual VO2 Nanoparticles for Multilevel Nanoscale Memory

P Kepič, M Horák, J Kabát, M Hájek, A Konečná… - ACS …, 2024 - ACS Publications
Vanadium dioxide (VO2) has received significant interest in the context of nanophotonic
metamaterials and memories owing to its reversible insulator–metal transition associated …

Tuning the Intrinsic Stochasticity of Resistive Switching in VO2 Microresistors

N Bidoul, N Roisin, D Flandre - Nano Letters, 2024 - ACS Publications
Vanadium dioxide (VO2) microresistors exhibit resistive switching above a certain threshold
voltage, allowing them to emulate neurons in neuromorphic systems. However, such …

Tuning the Resistance of a VO2 Junction by Focused Laser Beam and Atomic Force Microscopy

Z Fang, M Alzate‐Banguero… - Advanced Electronic …, 2024 - Wiley Online Library
Vanadium Dioxide (VO2) is a material that exhibits a phase transition from an insulating
state to a metallic state at≈ 68° C. During a temperature cycle consisting of warming …

Film morphology and substrate strain contributions to ramp reversal memory in

A Fried, E Anouchi, G Cohen Taguri, J Shvartzberg… - Physical Review …, 2024 - APS
The ramp reversal memory (RRM) effect that appears in thin films with temperature-driven
insulator-metal transitions (IMTs) is a nonvolatile memory effect induced by a simple reversal …