Making clean electrical contacts on 2D transition metal dichalcogenides

Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

Contact engineering for 2D materials and devices

DS Schulman, AJ Arnold, S Das - Chemical Society Reviews, 2018 - pubs.rsc.org
Over the past decade, the field of two-dimensional (2D) layered materials has surged,
promising a new platform for studying diverse physical phenomena that are scientifically …

Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides

C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam… - ACS …, 2017 - ACS Publications
Electrical metal contacts to two-dimensional (2D) semiconducting transition metal
dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device …

2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

Z Lin, A McCreary, N Briggs, S Subramanian… - 2D …, 2016 - iopscience.iop.org
The rise of two-dimensional (2D) materials research took place following the isolation of
graphene in 2004. These new 2D materials include transition metal dichalcogenides, mono …

Wafer-scale and universal van der Waals metal semiconductor contact

L Kong, R Wu, Y Chen, Y Huangfu, L Liu, W Li… - Nature …, 2023 - nature.com
Van der Waals (vdW) metallic contacts have been demonstrated as a promising approach to
reduce the contact resistance and minimize the Fermi level pinning at the interface of two …

Ohmic contact engineering for two-dimensional materials

Y Zheng, J Gao, C Han, W Chen - Cell Reports Physical Science, 2021 - cell.com
One of the major areas of semiconductor device research is the development of transparent
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …

Uncovering the Effects of Metal Contacts on Monolayer MoS2

K Schauble, D Zakhidov, E Yalon, S Deshmukh… - ACS …, 2020 - ACS Publications
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D)
semiconductor devices. Here, we present a comprehensive study of contact interfaces …

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

A Di Bartolomeo, A Grillo, F Urban… - Advanced Functional …, 2018 - Wiley Online Library
The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical
vapor deposition synthesized bilayer MoS2 channel and Ti Schottky contacts are discussed …

Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

P Bampoulis, R van Bremen, Q Yao… - … applied materials & …, 2017 - ACS Publications
Understanding the electronic contact between molybdenum disulfide (MoS2) and metal
electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 …

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

Z Wang, Q Li, Y Chen, B Cui, Y Li, F Besenbacher… - NPG Asia …, 2018 - nature.com
Tungsten diselenide (WSe2) has many excellent properties and provides superb potential in
applications of valley-based electronics, spin-electronics, and optoelectronics. To facilitate …