Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices
The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …
development of epitaxial growth techniques for single-crystalline semiconductors. However …
[HTML][HTML] Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding
between crystalline substrate and atomic building blocks, has been a key technique in the …
between crystalline substrate and atomic building blocks, has been a key technique in the …
Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC …
PV Seredin, SS Sharofidinov, DL Goloshchapov… - Optical Materials, 2024 - Elsevier
For the first time, a multilayer heterostructure consisting of periodically arranged GaN and
AlN layers was formed by chloride-hydride gas-phase epitaxy on a SiC/Si hybrid substrate …
AlN layers was formed by chloride-hydride gas-phase epitaxy on a SiC/Si hybrid substrate …
Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials
Monolithic 3-D integration has emerged as a promising technological solution for traditional
transistor scaling limitations and interconnection bottleneck. The challenge we must …
transistor scaling limitations and interconnection bottleneck. The challenge we must …
Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi …
PV Seredin, DL Goloshchapov, NA Kurilo, AO Radam… - Optical Materials, 2023 - Elsevier
Problems of the growth of nanoscale columnar Al x Ga 1-x N/AlN heterostructures on hybrid
substrates involving porous silicon and silicon carbide layers by molecular beam epitaxy …
substrates involving porous silicon and silicon carbide layers by molecular beam epitaxy …
Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V
compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED …
compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED …
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
Compositionally graded InAlAs buffers grown by metal–organic chemical vapor deposition
are impaired by phase separation occurring at In content higher than 35%. Phase …
are impaired by phase separation occurring at In content higher than 35%. Phase …
Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications
Integration of photonic devices on silicon (Si) substrates is a key method in enabling large
scale manufacturing of Si-based photonic–electronic circuits for next generation systems …
scale manufacturing of Si-based photonic–electronic circuits for next generation systems …
Flat metamorphic InAlAs buffer layer on GaAs (111) A misoriented substrates by growth kinetics control
We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs
metamorphic buffer layers on 2∘-off GaAs (111) A substrates using molecular beam epitaxy …
metamorphic buffer layers on 2∘-off GaAs (111) A substrates using molecular beam epitaxy …
Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
PV Seredin, N Kurilo, DL Goloshchapov, V Kashkarov… - Photonics, 2023 - mdpi.com
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon
substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this …
substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this …