In many power converter applications, particularly those with high variable loads, such as
traction and wind power, condition monitoring of the power semiconductor devices in the …

This paper deals with an active gate drive (AGD) technology for high-power insulated gate
bipolar transistors (IGBTs). It is based on an optimal combination of several requirements …

Severe arcing in DC switches can be prevented by hybrid switching techniques. In a ZVS
hybrid switch, semiconductor devices are placed in parallel with a mechanical switch. The …

This paper proposes a new gate drive circuit for IGBTs which can actively suppress the
voltage overshoot across the driven IGBT at turn-off and the voltage overshoot across the …

An analysis is presented of IGBTs connected in series, with reference to the phenomenon of
parasitic oscillation. A linear model is developed for use in the study. Two methods are …

Since the voltage blocking capability of a single insulated gate bipolar transistor (IGBT) is
limited, series-connected IGBTs are used in power electronic converters to satisfy the …

The operation of an IGBT in its active region is a well established technique for handling
short circuits, and also for voltage and dv/dt control. One important application of this …

The work presented in this paper is concerned with the effects of a high temperature gate
bias (HTGB) stress on punch-through (PT) and non-punch-through (NPT) insulated gate …

As switches in power electronic converters operate at higher and higher frequencies, current
and voltage transitions result in electromagnetic perturbations over wide frequency ranges …

The work presented in this paper is concerned with the effects of a high temperature gate
bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through …