A review of technologies and design techniques of millimeter-wave power amplifiers

V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …

Review of Ka-Band power amplifier

Z Wang, S Hu, L Gu, L Lin - Electronics, 2022 - mdpi.com
With the increase in the demand for high-speed transmission communication, satellite
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …

A 24–28-GHz GaN MMIC synchronous Doherty power amplifier with enhanced load modulation for 5G mm-wave applications

RJ Liu, XW Zhu, J Xia, ZM Zhao, Q Dong… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
In this article, a load-modulation enhanced wideband compact high-efficiency millimeter-
wave (mm-wave) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) …

Doherty PAs for 5G massive MIMO: Energy-efficient integrated DPA MMICs for sub-6-GHz and mm-wave 5G massive MIMO systems

W Chen, G Lv, X Liu, D Wang… - IEEE Microwave …, 2020 - ieeexplore.ieee.org
To accommodate growing user demand for faster data rates and extensive connectivity,
modern wireless communication systems must evolve to support a sharply increasing …

Watt-level 21–25-GHz integrated Doherty power amplifier in GaAs technology

C Ramella, V Camarchia, A Piacibello… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents the design and characterization of a Doherty power amplifier for K-band
applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of …

A 28-GHz symmetrical Doherty power amplifier using stacked-FET cells

DP Nguyen, T Pham, AV Pham - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
A two-stage Ka-band Doherty power amplifier (DPA) using a stacked field-effect transistor
(FET) cell is presented. We demonstrate, for the first time, the two critical parameters in a …

A linearity-improved 24–29-GHz GaN MMIC Doherty power amplifier with reconfigurable self-adaptive peaking gate bias network

R Liu, L Qi, A Zhu - IEEE Transactions on Microwave Theory …, 2024 - ieeexplore.ieee.org
In this article, a linearity-improved millimeter-wave (mm-wave) gallium nitride (GaN)
monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) is presented …

A compact Ka/Q dual-band GaAs MMIC Doherty power amplifier with simplified offset lines for 5G applications

G Lv, W Chen, X Chen… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
In this paper, a Ka/Q dual-band Doherty power amplifier (DPA) with simplified offset lines is
implemented in a 0.1-μm gallium arsenide (GaAs) process. It is found that the dual-band …

Power up potential power amplifier technologies for 5G applications

T Qi, S He - IEEE Microwave Magazine, 2019 - ieeexplore.ieee.org
Power amplifiers (PAs) will receive significant attention in the 5G era because of increasing
wireless communication requirements. The development trends of PAs with broader …

A Compact Ka-Band Integrated Doherty Amplifier With Reconfigurable Input Network

DP Nguyen, BL Pham, AV Pham - IEEE transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we present the design of an ultracompact monolithic millimeter-wave
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …