Z Wang, S Hu, L Gu, L Lin - Electronics, 2022 - mdpi.com
With the increase in the demand for high-speed transmission communication, satellite communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …
W Chen, G Lv, X Liu, D Wang… - IEEE Microwave …, 2020 - ieeexplore.ieee.org
To accommodate growing user demand for faster data rates and extensive connectivity, modern wireless communication systems must evolve to support a sharply increasing …
This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of …
DP Nguyen, T Pham, AV Pham - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
A two-stage Ka-band Doherty power amplifier (DPA) using a stacked field-effect transistor (FET) cell is presented. We demonstrate, for the first time, the two critical parameters in a …
R Liu, L Qi, A Zhu - IEEE Transactions on Microwave Theory …, 2024 - ieeexplore.ieee.org
In this article, a linearity-improved millimeter-wave (mm-wave) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) is presented …
G Lv, W Chen, X Chen… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
In this paper, a Ka/Q dual-band Doherty power amplifier (DPA) with simplified offset lines is implemented in a 0.1-μm gallium arsenide (GaAs) process. It is found that the dual-band …
T Qi, S He - IEEE Microwave Magazine, 2019 - ieeexplore.ieee.org
Power amplifiers (PAs) will receive significant attention in the 5G era because of increasing wireless communication requirements. The development trends of PAs with broader …
DP Nguyen, BL Pham, AV Pham - IEEE transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we present the design of an ultracompact monolithic millimeter-wave integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …