The Schottky barrier transistor in emerging electronic devices

M Schwarz, TD Vethaak, V Derycke… - …, 2023 - iopscience.iop.org
This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …

A short review on: optimization techniques of ZnO based thin film transistors

S Vyas - Chinese journal of physics, 2018 - Elsevier
There has been a significant global interest in the thin film transistor (TFT) due to its potential
use in flat panel display. A great deal of interest in zinc oxide (ZnO) based TFT has been …

Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

D Li, M Zhao, K Liang, H Ren, Q Wu, H Wang, B Zhu - Nanoscale, 2020 - pubs.rsc.org
Source-gated transistors (SGTs) with Schottky barriers have emerged as extraordinary
candidates for constructing low-power electronics by virtue of device simplicity, high gain …

A comparative analysis for effects of solvents on optical properties of Mg doped ZnO thin films for optoelectronic applications

F Baig, MW Ashraf, A Asif, M Imran - Optik, 2020 - Elsevier
Abstract Nanocrystalline Magnesium doped ZnO thin films (MgZnO) were synthesized on
glass substrate using five different solvents ie 1-Propanol (1Pd), 2-Propanol (2Pd), Ethanol …

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

AH Adl, P Kar, S Farsinezhad, H Sharma, K Shankar - Rsc Advances, 2015 - pubs.rsc.org
ZnO is an increasingly important wide bandgap semiconductor for optoelectronic
applications. Solution processing provides a facile and inexpensive method to form ZnO thin …

[PDF][PDF] High‐Gain Subnanowatt Power Consumption Hybrid Complementary Logic Inverter with WSe2 Nanosheet and ZnO Nanowire Transistors on Glass

SHH Shokouh, A Pezeshki, SR Ali Raza, HS Lee… - Advanced …, 2015 - academia.edu
DOI: 10.1002/adma. 201403992 the source and drain (or vice versa) of ZnO nanowire FET,
which would be connected in series to a bottom gate WSe 2 nanosheet FET. Our nanowire …

High breakdown strength Schottky diodes made from electrodeposited ZnO for power electronics applications

M Benlamri, BD Wiltshire, Y Zhang… - ACS Applied …, 2019 - ACS Publications
The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical
electric field of 800 kV/cm. This value, which is 2–3 times higher than in monocrystalline …

UV–Vis photodetector based on ionic liquid-modified perovskite–ZnO composite

Y Peng, D Jiang, M Zhao - Journal of Applied Physics, 2022 - pubs.aip.org
Photodetectors (PDs) that combine inorganic semiconductors with organic lead halide
perovskites to produce broader spectral responses have captured great interest from …

Post-annealing induced oxygen vacancy mediated non-polar ZnO films with excellent opto-electronic performance

L Qi, Y Qi, Z Chai, Y Qi - Ceramics International, 2019 - Elsevier
The considerably enhanced opto-electronic properties of ZnO films with non-polar
orientations have been realized by introducing oxygen vacancies. Excitation of oxygen …

Planar microwave resonator with electrodeposited ZnO thin film for ultraviolet detection

M Benlamri, S Deif, N Mahdi, M Baghelani… - Semiconductor …, 2019 - iopscience.iop.org
A ZnO thin film is electrodeposited on the conducting strips of a planar microwave ring
resonator to enable the formation of a novel sensor for ultraviolet irradiation. The fabrication …