See-mcam: Scalable multi-bit fefet content addressable memories for energy efficient associative search

S Shou, CK Liu, S Yun, Z Wan, K Ni… - 2023 IEEE/ACM …, 2023 - ieeexplore.ieee.org
Artificial intelligence has made remarkable advancements in recent years, leading to the
development of algorithms and models capable of handling ever-increasing amounts of …

Deep random forest with ferroelectric analog content addressable memory

X Yin, F Müller, AF Laguna, C Li, Q Huang, Z Shi… - Science …, 2024 - science.org
Deep random forest (DRF), which combines deep learning and random forest, exhibits
comparable accuracy, interpretability, low memory and computational overhead to deep …

On the feasibility of 1t ferroelectric FET memory array

Z Jiang, Z Zhao, S Deng, Y Xiao, Y Xu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
To fully exploit the ferroelectric field effect transistor (FeFET) as compact embedded
nonvolatile memory for various computing and storage applications, it is desirable to use a …

Voltage bias scheme optimization in FeFET based neural network system

J Zhao, B Chen, N Liu, J Zhou, R Cheng… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In this work, we focused on the performance optimization of the neural network (NN) system
in the synaptic device of HfAlOx (HAO)-based ferroelectric field-transistors (FeFET) …

A homogeneous processing fabric for matrix-vector multiplication and associative search using ferroelectric time-domain compute-in-memory

X Yin, Q Huang, F Müller, S Deng, A Vardar… - arXiv preprint arXiv …, 2022 - arxiv.org
In this work, we propose a ferroelectric FET (FeFET) time-domain compute-in-memory (TD-
CiM) array as a homogeneous processing fabric for binary multiplication-accumulation …

Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines

Y Xu, Z Zhao, Y Xiao, T Yu, H Mulaosmanovic… - Science …, 2024 - science.org
Field programmable gate array (FPGA) is widely used in the acceleration of deep learning
applications because of its reconfigurability, flexibility, and fast time-to-market. However …

Hybrid-FE-layer FeFET with high linearity and endurance towards on-chip CIM by array demonstration

Y Zhou, H Shao, R Zhu, W Luo… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Analog weight cells based on ferroelectric field-effect transistors (FeFETs) are promising for
fast and energy efficient compute-in-memory (CIM) accelerators, yet their on-chip training is …

[PDF][PDF] 基于铁电晶体管的存储与存算一体电路

刘勇, 李泰昕, 祝希, 杨华中, 李学清 - 电子与信息学报, 2023 - jeit.ac.cn
近年来, 物联网和人工智能等技术的发展对片上存储与智能计算的能效, 密度以及性能提出了更
高的要求. 面对传统CMOS 处理器的能效与密度瓶颈, 以及传统冯· 诺伊曼架构的“存储墙” 瓶颈 …

A Homogeneous FeFET-based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search

X Yin, Q Huang, HE Barkam, F Müller… - … on Computer-Aided …, 2024 - ieeexplore.ieee.org
Matrix-vector multiplication (MVM) and content-based search are two key operations in
many machine learning workloads. This paper proposes a ferroelectric FET (FeFET) time …

Embedding security into ferroelectric FET array via in situ memory operation

Y Xu, Y Xiao, Z Zhao, F Müller, A Vardar, X Gong… - Nature …, 2023 - nature.com
Non-volatile memories (NVMs) have the potential to reshape next-generation memory
systems because of their promising properties of near-zero leakage power consumption …