[HTML][HTML] An overview of normally-off GaN-based high electron mobility transistors
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …
become mandatory to improve the energy efficiency of devices and modules and to reduce …
Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
[HTML][HTML] GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
[HTML][HTML] The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga… - Journal of Physics D …, 2018 - iopscience.iop.org
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
K Konishi, K Goto, H Murakami, Y Kumagai… - Applied Physics …, 2017 - pubs.aip.org
Ga 2 O 3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
A survey of wide bandgap power semiconductor devices
J Millan, P Godignon, X Perpiñà… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Wide bandgap semiconductors show superior material properties enabling potential power
device operation at higher temperatures, voltages, and switching speeds than current Si …
device operation at higher temperatures, voltages, and switching speeds than current Si …
[图书][B] GaN transistors for efficient power conversion
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN
transistors in power conversion systems design This updated, third edition of a popular book …
transistors in power conversion systems design This updated, third edition of a popular book …
[HTML][HTML] Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
N Islam, MFP Mohamed, MFAJ Khan, S Falina… - Crystals, 2022 - mdpi.com
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Recent progress of GaN power devices for automotive applications
T Kachi - Japanese Journal of Applied Physics, 2014 - iopscience.iop.org
Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs).
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …
GaN power integration for high frequency and high efficiency power applications: A review
High frequency and high efficiency operation is one of the premier interests in the signal and
energy conversion applications. The wide bandgap GaN based devices possess superior …
energy conversion applications. The wide bandgap GaN based devices possess superior …