Aluminium (Al) composition is a critical parameter of performance for deep ultraviolet (DUV)
AlGaN devices. In multiple-quantum-wells (MQW) nanowire laser diode, quantum barriers …

The performance of deep ultraviolet (DUV) laser diodes (LDs) may be affected by structural
variations in the composition of AlGaN devices. In this work, we investigate the impact of …

An electron blocking layer (EBL) is often utilized in the p-type region of AlGaN-based deep
ultraviolet laser diodes (DUV LDs) to control electron overflow. However, Al-rich …

Subject of study. In AlGaN-based deep ultraviolet laser diodes, the quantum well affects the
performance in the active region. Moreover, the composition of aluminum in quantum …

This study investigated the potential of using multispectral imaging for detecting physical
stress on human being. Participants were recruited to obtain multispectral images and, a …

We investigated the dependency of waveguide structures on ripples of far-field patterns in
405nm GaN-based laser diodes theoretically and experimentally. As the n-type cladding …

In this work the influence of GaN substrate thickness on the near and far-field patterns of
InGaN lasers structures is numerically studied. In simulation a typical structure with an …

En este trabajo se analiza la influencia del espesor de las capas ny p-GaN sobre los
patrones de campo cercano y lejano de estructuras láser de InxGa1-xN con pozos cuánticos …

Group-III-nitride-based diode lasers [1, 2] are of great importance as light sources for a
variety of short-wavelength laser applications, such as highcapacity compact disks, UV …